型号 功能描述 生产厂家 企业 LOGO 操作
SST29EE010A-150-4I-U

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

更新时间:2026-2-3 8:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SST
22+
ADI/亚德诺
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
SST
24+
PLCC32
25836
新到现货,只做全新原装正品
SST
25+
NA
10000
原装现货假一罚十
SST
2223+
PLCC32
26800
只做原装正品假一赔十为客户做到零风险
SST
23+
PLCC
98900
原厂原装正品现货!!
25+
PLCC32
500000
行业低价,代理渠道
SST
26+
PLCC32
12000
原装,正品
SST
23+
DIP32
8560
受权代理!全新原装现货特价热卖!
SST
04+
PLCC
4200
原装现货价格有优势量多可发货
SST
23+
NA
8000
全新原装假一赔十

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