型号 功能描述 生产厂家 企业 LOGO 操作
SST29EE010A-200-4C-W

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with

SST

Silicon Storage Technology, Inc

更新时间:2026-2-2 15:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SST
23+
NA
8000
全新原装假一赔十
SST
22+
PLCC
2000
原装正品现货
SST
2024+
TSSOP-32
50000
原装现货
SST
2447
PLCC32
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SST
22+
PLCC32
20000
公司只做原装 品质保证
SST
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
SST
23+
DIP
3000
原装正品假一罚百!可开增票!
SST
25+
DIP
2789
全新原装自家现货!价格优势!
SST
22+
PLCC
12245
现货,原厂原装假一罚十!
SST
23+
DIP32
8560
受权代理!全新原装现货特价热卖!

SST29EE010A-200-4C-W芯片相关品牌

SST29EE010A-200-4C-W数据表相关新闻