位置：首页 > IC中文资料第272页 > SSS5N60A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SSS5N60A | Advanced Power MOSFET BVDSS = 600 V RDS(on) = 2.2Ω ID = 2.6 A FEATURES Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 μA (Max.) @ VDS = 600V Lower RDS( | Fairchild 仙童半导体 |   | |
SSS5N60A | Advanced Power MOSFET | ONSEMI 安森美半导体 | | |
4.5 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application | UTC 友顺 | | ||
4.5 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：242.68 Kbytes Page：6 Pages | UTC 友顺 | | ||
5A, 600V N-CHANNEL POWER MOSFET 文件：254.02 Kbytes Page：6 Pages | UTC 友顺 | | ||
Power MOSFET 文件：1.06579 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel Power MOSFET 文件：396.63 Kbytes Page：8 Pages | NELLSEMI 尼尔半导体 | |
SSS5N60A产品属性
- 类型
描述
- 型号
SSS5N60A
- 功能描述
MOSFET TO-220F
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO 220 |
155975 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILD |
20+ |
TO-220F |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCHILD |
24+ |
TO-220F |
27500 |
原装正品,价格最低! |
|||
FAIRCHILD/仙童 |
21+ |
TO-220F |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
仙童 |
06+ |
TO-220 |
2000 |
自己公司全新库存绝对有货 |
|||
FSC |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
FAIRCHILD |
24+ |
TO-220F |
8 |
||||
FAIRCHILD/仙童 |
23+ |
TO-220F |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
FAIRCHILD/仙童 |
24+ |
TO-220F |
9600 |
原装现货,优势供应,支持实单! |
|||
FAIRCHILD/仙童 |
2447 |
TO220F |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
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2019-3-7
DdatasheetPDF页码索引
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