型号 功能描述 生产厂家&企业 LOGO 操作
SSR2N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
SSR2N60

N-Channel650V(D-S)MOSFET

文件:1.08809 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

AdvancedPowerMOSFET

AdvancedPowerMOSFET FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:25mA(Max.)@VDS=600V LowerRDS(ON):3.892W(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

N-Channel650V(D-S)MOSFET

文件:1.0881 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

iscN-ChannelMOSFETTransistor

文件:322.1 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel650V(D-S)MOSFET

文件:1.08808 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel650V(D-S)MOSFET

文件:1.08811 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel650V(D-S)MOSFET

文件:1.08809 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel650V(D-S)MOSFET

文件:1.08809 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

600VN-ChannelPowerMOSFET

Features ●RDS(ON)

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

DYELEC

2Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

N2Amps竊?00VoltsN-ChannelMOSFET

Description TheET2N60N-CeannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. Features ●RDS(ON)=5.00Ω@VGS=10V ●Lowgatecharge

ESTEKEstek Electronics Co. Ltd

Estek Electronics Co. Ltd

ESTEK

2Amps,600/650VoltsN-CHANNELPOWERMOSFET

TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

2A600VN-channelEnhancementModePowerMOSFET

文件:1.34834 Mbytes Page:13 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

WXDH

SSR2N60产品属性

  • 类型

    描述

  • 型号

    SSR2N60

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    600V N-Channel MOSFET

更新时间:2024-4-19 8:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FSC
1305+
TO-252
12000
FAIRCHILD
20+/21+
TO-252
50000
全新原装价格优惠
FAIRCHILD
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
FAIRCHILD
2016+
TO-252
3500
只做原装,假一罚十,公司可开17%增值税发票!
三星
1950+
TO252
9852
只做原装正品现货!或订货假一赔十!
SEC
23+
TO-252
20000
专做原装正品,假一罚百!
onsemi(安森美)
23+
TO-252
9203
支持大陆交货,美金交易。原装现货库存。
FAIRCHILD/仙童
23+
TO-252
30000
全新原装现货,价格优势
FAIRCHILD/仙童
22+
TO-252
51
只做原装进口 免费送样!!
仙童
06+
TO-252
13000
原装

SSR2N60芯片相关品牌

  • ALSC
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  • BETLUX
  • delta
  • Diotec
  • ETAL
  • LUMBERG
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  • ONSEMI
  • WEIDMULLER
  • YFWDIODE

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