P-Ch Enhancement Mode Power MOSFET

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, pri

P-Ch Enhancement Mode Power MOSFET

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MosFET

-40V – -20A – P-channel Power MOS FET Application : Automotive

Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 25 m Max. ( VGS = -10 V, ID = -10 A ) RDS(on) = 38 m Max. ( VGS = -4.5 V, ID = -10 A )  Low input capacitance : Ciss = 16

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -20A@ TC=25℃ ·Drain Source Voltage -VDSS= -40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

P-Channel MOSFET

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Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers

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Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers

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