| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SS10120 | 丝印代码:K112;SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c | SHUNYE 顺烨电子 | ||
丝印代码:K112;SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c | SHUNYE 顺烨电子 | |||
丝印代码:K112;SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c | SY 顺烨电子 | |||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | PANJIT 強茂 | |||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 文件:271.28 Kbytes Page:6 Pages | PANJIT 強茂 | |||
MICROWAVE POWER TRANSISTOR NPN SILICON The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ) • 100 Tested fo | MACOM | |||
MICROWAVE POWER TRANSISTOR The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 8.0 dB Min., 9.2 dB (Typ) • 100 Tested for | MOTOROLA 摩托罗拉 | |||
SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS SCANSWITCH Power Rectifier For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the M | MOTOROLA 摩托罗拉 | |||
SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS SCANSWITCH Power Rectifier For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the M | MOTOROLA 摩托罗拉 | |||
120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime a | ERICSSON 爱立信 |
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