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SS10120

丝印代码:K112;SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

SHUNYE

顺烨电子

丝印代码:K112;SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

SHUNYE

顺烨电子

丝印代码:K112;SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

SY

顺烨电子

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

PANJIT

強茂

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件:271.28 Kbytes Page:6 Pages

PANJIT

強茂

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ) • 100 Tested fo

MACOM

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 8.0 dB Min., 9.2 dB (Typ) • 100 Tested for

MOTOROLA

摩托罗拉

SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS

SCANSWITCH Power Rectifier For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the M

MOTOROLA

摩托罗拉

SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS

SCANSWITCH Power Rectifier For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the M

MOTOROLA

摩托罗拉

120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime a

ERICSSON

爱立信

更新时间:2026-5-16 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PANJIN
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SOD-123
880000
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PANJIT
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SOD123
36195
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PANJIT/强茂
2450+
SOD123F
8850
只做原装正品假一赔十为客户做到零风险!!
PANJIT/强茂
2511
SOD-123FL
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
扬杰
22+
SMC
20000
只做原装 品质保障
PANJIT/ 强茂
24+
SMD
9600
原装现货,优势供应,支持实单!
PANJIT/ 强茂
2447
SOD123
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
PANJIT
24+
SOD123
36200
全新原装现货/放心购买
PANJIT
14+15+
SOD123HE
63000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
PANJIT
2023+
SOD123HE
8800
正品渠道现货 终端可提供BOM表配单。

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