SCHOTTKY BARRIER RECTIFIER

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current capability ,Low forward voltage drop • High surge capability

LOW VF SCHOTTKY BARRIER RECTIFIER

FEATURES Power pack Metal silicon junction ,majority carrier conduction Guard ring for overvoltage protection Low power loss ,high efficiency High current capability ,low forward voltage drop High forward surge capability High frequency operation Meets MSL Level ，1 per J-STD-020,LF MA X pe

低正向肖特基二极管

SWITCHMODE Schottky Power Rectifier

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s

Fast Recovery Rectifier

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20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers

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Noninductive Planar Low Cost, 20 Watt TO 220 Package Thick Film Resistor

文件：50.48 Kbytes Page：3 Pages

Noninductive Planar Low Cost, 20 Watt TO 220 Package Thick Film Resistor

文件：50.48 Kbytes Page：3 Pages