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SR703

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

POLYFET

SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 70 Amperes

FEATURES * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High switching capability * High surge capabitity * High reliability

RECTRON

丽正国际

SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 70 Amperes

FEATURES * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High switching capability * High surge capabitity * High reliability

RECTRON

丽正国际

RF POWER VDMOS TRANSISTOR

文件:61.91 Kbytes Page:2 Pages

POLYFET

Schottky Diodes

RECTRON

丽正国际

Schottky Diodes

RECTRON

丽正国际

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

MOTOROLA

摩托罗拉

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

MOTOROLA

摩托罗拉

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

MOTOROLA

摩托罗拉

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

130.0 Watts Push - Pull Package style AH General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

POLYFET

Semiconductor Laser for LBPLaser Beam Printers

文件:41.54 Kbytes Page:2 Pages

PANASONIC

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更新时间:2026-3-15 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
POLYFET
23+
TO-59
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
POLYFETRFDEVICES
23+
TO-59
8510
原装正品代理渠道价格优势
POLYFET
23+
TO-62
950
专营高频管模块,全新原装!
POLYFET
19+
AR
3128
原装进口假一罚十
ST
22+
高频管
350
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
POLYFET
2026+
AR
65248
百分百原装现货 实单必成
POLYFET
NA
5500
一级代理 原装正品假一罚十价格优势长期供货
POLYFET
24+
SMD
5500
长期供应原装现货实单可谈
POLYFET
25+
TO-62
9630
我们只做原装正品现货!量大价优!
23+
高频管
3000
原装正品假一罚百!可开增票!

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