Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

Reverse Blocking Thyristors SCRs 4.0 AMPERES RMS 100 − 600 VOLTS PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. Feat

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 100 THRU 600 VOLTS

DESCRIPTION: The CENTRAL SEMICONDUCTOR MCR703A, MCR704A, MCR706A, and MCR708A are epoxy molded SCRs designed for sensing circuit and control system applications. MARKING: FULL PART NUMBER

Silicon Planar PNPN Thyristor (4A SCR)

DESCRIPTION Thyristor in a TO-252 Package. FEATURES The consumption level provide reliable applications, such as temperature, lighting, speed, etc. APPLICATIONS Applied to high Voltage control circuit.

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

Silicon Controlled Rectifiers

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Silicon Controlled Rectifiers

Surface mount SCR

THYRISTOR:SCR

SURFACE MOUNT SILICON CONTROLLED RECTIFIERS

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Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

Reverse Blocking Thyristors SCRs 4.0 AMPERES RMS 100 − 600 VOLTS PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. Feat

Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

Reverse Blocking Thyristors SCRs 4.0 AMPERES RMS 100 − 600 VOLTS PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. Feat

isc Thyristors

APPLICATIONS · Small Size · Passivated Die Surface for Reliability and Uniformity · Low Level Triggering and Holding Characteristics

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SCR 100V 4A DPAK 分立半导体产品 晶闸管 - SCR

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

130.0 Watts Push - Pull Package style AH General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Semiconductor Laser for LBPLaser Beam Printers

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