Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

Reverse Blocking Thyristors SCRs 4.0 AMPERES RMS 100 − 600 VOLTS PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. Feat

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 100 THRU 600 VOLTS

DESCRIPTION: The CENTRAL SEMICONDUCTOR MCR703A, MCR704A, MCR706A, and MCR708A are epoxy molded SCRs designed for sensing circuit and control system applications. MARKING: FULL PART NUMBER

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

Silicon Planar PNPN Thyristor (4A SCR)

DESCRIPTION Thyristor in a TO-252 Package. FEATURES The consumption level provide reliable applications, such as temperature, lighting, speed, etc. APPLICATIONS Applied to high Voltage control circuit.

Silicon Controlled Rectifiers

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SURFACE MOUNT SILICON CONTROLLED RECTIFIERS

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Silicon Controlled Rectifiers

Surface mount SCR

THYRISTOR:SCR

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

Reverse Blocking Thyristors SCRs 4.0 AMPERES RMS 100 − 600 VOLTS PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. Feat

Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

Reverse Blocking Thyristors SCRs 4.0 AMPERES RMS 100 − 600 VOLTS PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. Feat

isc Thyristors

APPLICATIONS · Small Size · Passivated Die Surface for Reliability and Uniformity · Low Level Triggering and Holding Characteristics

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SCR 100V 4A DPAK 分立半导体产品 晶闸管 - SCR

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

130.0 Watts Push - Pull Package style AH General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Semiconductor Laser for LBPLaser Beam Printers

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