MJE703晶体管资料

  • MJE703别名:MJE703三极管、MJE703晶体管、MJE703晶体三极管

  • MJE703生产厂家:美国摩托罗拉半导体公司

  • MJE703制作材料:Si-P+Darl+Di

  • MJE703性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • MJE703封装形式:直插封装

  • MJE703极限工作电压:80V

  • MJE703最大电流允许值:4A

  • MJE703最大工作频率:>1MHZ

  • MJE703引脚数:3

  • MJE703最大耗散功率:40W

  • MJE703放大倍数:β>750

  • MJE703图片代号:B-21

  • MJE703vtest:80

  • MJE703htest:1000100

  • MJE703atest:4

  • MJE703wtest:40

  • MJE703代换 MJE703用什么型号代替:BD262A,BD680,BD780,FC50B,2N6036,

MJE703价格

参考价格:¥1.2952

型号:MJE703G 品牌:ONSemi 备注:这里有MJE703多少钱,2024年最近7天走势,今日出价,今日竞价,MJE703批发/采购报价,MJE703行情走势销售排行榜,MJE703报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJE703

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托罗拉

Motorola
MJE703

NPN(HIGHDCCURRENTGAIN)

SamsungSamsung Group

三星三星半导体

Samsung
MJE703

MonolithicConstructionWithBuilt-inBase-EmitterResistors

MonolithicConstructionWithBuilt-inBase-EmitterResistors •HighDCCurrentGain:hFE=750(Min.)@IC=-1.5and-2.0ADC •ComplementtoMJE800/801/802/803

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJE703

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE703

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •Collector–EmitterSustainingVoltage—:VCEO(SUS)=-80V •DCCurrentGain—:hFE=750(Min)@IC=-2A =100(Min)@IC=-4A •ComplementtoTypeMJE803 APPLICATIONS •Designedforgeneral-purposeamplifierandlow-speedswitchingap

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJE703

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices.

CentralCentral Semiconductor Corp

美国中央半导体

Central
MJE703

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
MJE703

封装/外壳:TO-225AA,TO-126-3 包装:托盘 描述:TRANS PNP DARL 80V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE703

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

文件:84.77 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

PlasticDarlingtonComplementarySiliconPowerTransistors

Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •Collector–EmitterBreakdownVoltage—:V(BR)CEO=-80V •DCCurrentGain—:hFE=750(Min)@IC=-2A •ComplementtoTypeMJE803T APPLICATIONS •Designedforgeneral-purposeamplifierandlow-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

POWERTRANSISTORS(4.0A,60-80V,40W)

PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat

MOSPEC

MOSPEC

MOSPEC

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

文件:84.77 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

封装/外壳:TO-225AA,TO-126-3 包装:管件 描述:TRANS PNP DARL 80V 4A TO126-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

PHENOLICINSTRUMENTCASES

[KEYSTONE] PHENOLICINSTRUMENTCASES •ChoiceofSizes •Sturdyconstruction •Flushmountingpanels •Casesandpanelsaresoldseparately •CoversavailableinPhenolicorAluminum •Coverscanbemachinedtoacceptdials,switches,displays •Panelmountingscrewsavailable

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

Capacity(20-hour)280Ah

文件:258.29 Kbytes Page:1 Pages

GSYUASABATTERYGS Yuasa Battery Sales UK Ltd

GSYUASABATTERYGS Yuasa Battery Sales UK Ltd

GSYUASABATTERY

E-Z-Hookisdedicatedtoprovidingqualityparts,deliveredon-timeatreasonableprices

文件:4.89948 Mbytes Page:122 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

E-Z-Hookisdedicatedtoprovidingqualityparts,deliveredon-timeatreasonableprices

文件:4.89948 Mbytes Page:122 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

HARTMANPowerSwitchingDCContactors

文件:1.0731 Mbytes Page:5 Pages

TECTE Connectivity Ltd

泰科电子泰科电子有限公司

TEC

MJE703产品属性

  • 类型

    描述

  • 型号

    MJE703

  • 功能描述

    达林顿晶体管 4A 80V Bipolar

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2024-4-19 14:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
23+
TO-126
10000
公司只做原装正品
ON
2023+
TO-126
8800
正品渠道现货 终端可提供BOM表配单。
ON/ST
1738+
TO-126
8529
科恒伟业!只做原装正品,假一赔十!
FAIRC
2020+
TO-126
16800
绝对原装进口现货,假一赔十,价格优势!?
NEXPERIA/安世
23+
SOD123W
69820
终端可以免费供样,支持BOM配单!
ON
22+
TO-126
168
正规渠道,只有原装!
ON
22+
TO-126
28600
只做原装正品现货假一赔十一级代理
ON
2023+
TO-126
700000
柒号芯城跟原厂的距离只有0.07公分
ON
03+
TO-126
168
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON
23+
TO-225
7750
全新原装优势

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