位置:首页 > IC中文资料第1636页 > MJE703
MJE703晶体管资料
MJE703别名:MJE703三极管、MJE703晶体管、MJE703晶体三极管
MJE703生产厂家:美国摩托罗拉半导体公司
MJE703制作材料:Si-P+Darl+Di
MJE703性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
MJE703封装形式:直插封装
MJE703极限工作电压:80V
MJE703最大电流允许值:4A
MJE703最大工作频率:>1MHZ
MJE703引脚数:3
MJE703最大耗散功率:40W
MJE703放大倍数:β>750
MJE703图片代号:B-21
MJE703vtest:80
MJE703htest:1000100
- MJE703atest:4
MJE703wtest:40
MJE703代换 MJE703用什么型号代替:BD262A,BD680,BD780,FC50B,2N6036,
MJE703价格
参考价格:¥1.2952
型号:MJE703G 品牌:ONSemi 备注:这里有MJE703多少钱,2024年最近7天走势,今日出价,今日竞价,MJE703批发/采购报价,MJE703行情走势销售排行榜,MJE703报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MJE703 | 4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series | MotorolaMotorola, Inc 摩托罗拉 | ||
MJE703 | NPN(HIGHDCCURRENTGAIN)
| SamsungSamsung Group 三星三星半导体 | ||
MJE703 | MonolithicConstructionWithBuilt-inBase-EmitterResistors MonolithicConstructionWithBuilt-inBase-EmitterResistors •HighDCCurrentGain:hFE=750(Min.)@IC=-1.5and-2.0ADC •ComplementtoMJE800/801/802/803 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MJE703 | DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MJE703 | iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector–EmitterSustainingVoltage—:VCEO(SUS)=-80V •DCCurrentGain—:hFE=750(Min)@IC=-2A =100(Min)@IC=-4A •ComplementtoTypeMJE803 APPLICATIONS •Designedforgeneral-purposeamplifierandlow-speedswitchingap | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
MJE703 | COMPLEMENTARYPOWERDARLINGTONTRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices. | CentralCentral Semiconductor Corp 美国中央半导体 | ||
MJE703 | PlasticDarlingtonComplementarySiliconPowerTransistors ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
MJE703 | 封装/外壳:TO-225AA,TO-126-3 包装:托盘 描述:TRANS PNP DARL 80V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MJE703 | 4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT 文件:84.77 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
PlasticDarlingtonComplementarySiliconPowerTransistors Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector–EmitterBreakdownVoltage—:V(BR)CEO=-80V •DCCurrentGain—:hFE=750(Min)@IC=-2A •ComplementtoTypeMJE803T APPLICATIONS •Designedforgeneral-purposeamplifierandlow-speedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
POWERTRANSISTORS(4.0A,60-80V,40W) PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat | MOSPEC MOSPEC | |||
4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT 文件:84.77 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
封装/外壳:TO-225AA,TO-126-3 包装:管件 描述:TRANS PNP DARL 80V 4A TO126-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PHENOLICINSTRUMENTCASES [KEYSTONE] PHENOLICINSTRUMENTCASES •ChoiceofSizes •Sturdyconstruction •Flushmountingpanels •Casesandpanelsaresoldseparately •CoversavailableinPhenolicorAluminum •Coverscanbemachinedtoacceptdials,switches,displays •Panelmountingscrewsavailable | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
Capacity(20-hour)280Ah 文件:258.29 Kbytes Page:1 Pages | GSYUASABATTERYGS Yuasa Battery Sales UK Ltd GSYUASABATTERYGS Yuasa Battery Sales UK Ltd | |||
E-Z-Hookisdedicatedtoprovidingqualityparts,deliveredon-timeatreasonableprices 文件:4.89948 Mbytes Page:122 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
E-Z-Hookisdedicatedtoprovidingqualityparts,deliveredon-timeatreasonableprices 文件:4.89948 Mbytes Page:122 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
HARTMANPowerSwitchingDCContactors 文件:1.0731 Mbytes Page:5 Pages | TECTE Connectivity Ltd 泰科电子泰科电子有限公司 |
MJE703产品属性
- 类型
描述
- 型号
MJE703
- 功能描述
达林顿晶体管 4A 80V Bipolar
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
23+ |
TO-126 |
10000 |
公司只做原装正品 |
|||
ON |
2023+ |
TO-126 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
ON/ST |
1738+ |
TO-126 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
FAIRC |
2020+ |
TO-126 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
NEXPERIA/安世 |
23+ |
SOD123W |
69820 |
终端可以免费供样,支持BOM配单! |
|||
ON |
22+ |
TO-126 |
168 |
正规渠道,只有原装! |
|||
ON |
22+ |
TO-126 |
28600 |
只做原装正品现货假一赔十一级代理 |
|||
ON |
2023+ |
TO-126 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
ON |
03+ |
TO-126 |
168 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON |
23+ |
TO-225 |
7750 |
全新原装优势 |
MJE703规格书下载地址
MJE703参数引脚图相关
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- nand闪存
- n74
- n100
- mxt
- murata
- mt7201
- mt6795
- msm8625q
- msm7227a
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- MJH10012
- MJF6668
- MJF6388
- MJF127
- MJF122
- MJE8500
- MJE803T
- MJE803G
- MJE803
- MJE802T
- MJE802G
- MJE802
- MJE801T
- MJE801
- MJE800T
- MJE800G
- MJE800
- MJE722
- MJE721
- MJE720
- MJE712
- MJE711
- MJE710
- MJE703T
- MJE703G
- MJE702T
- MJE702G
- MJE702
- MJE701T
- MJE701
- MJE700T
- MJE700G
- MJE700
- MJE6045
- MJE6044
- MJE6043
- MJE6042
- MJE6041
- MJE6040
- MJE5985
- MJE5984
- MJE5983
- MJE5982
- MJE5981
- MJE5980
- MJE5979
- MJE5978
- MJE5852
- MJE5851
- MJE5850
- MJE5742
- MJE5741
- MJE5740
- MJE5731
MJE703数据表相关新闻
MJL21195G
MJL21195G
2021-10-22MJE182G 现货热卖。假一赔十!!!!
MJE182G现货热卖。假一赔十!!!!
2021-7-7MK10DN32VLF5
类别 集成电路(IC) 嵌入式-微控制器 制造商 NXPUSAInc. 系列 KinetisK10 包装 托盘 零件状态 有源 核心处理器 ARM?Cortex?-M4 内核规格 32-位 速度 50MHz 连接能力 I2C,IrDA,SPI,UART/USART 外设 DMA,I2S,LVD,POR,PWM,WDT 程序存储容量 32KB(32Kx8) 程
2021-3-5MJE802G,MJE702G,只售原装货,片片来自原产,一级代理销售
MJE802G,MJE702G,只售原装货,片片来自原产,一级代理销售
2019-11-30MJE182G双极晶体管-双极结型晶体管(BJT)原装现货
MJE182G双极晶体管-双极结型晶体管(BJT)原装现货
2019-11-12MJE182G,双极晶体管-双极结型晶体管(BJT)
深圳市宏世佳电子现货销售
2019-10-23
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80