MJE703晶体管资料
MJE703别名:MJE703三极管、MJE703晶体管、MJE703晶体三极管
MJE703生产厂家:美国摩托罗拉半导体公司
MJE703制作材料:Si-P+Darl+Di
MJE703性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
MJE703封装形式:直插封装
MJE703极限工作电压:80V
MJE703最大电流允许值:4A
MJE703最大工作频率:>1MHZ
MJE703引脚数:3
MJE703最大耗散功率:40W
MJE703放大倍数:β>750
MJE703图片代号:B-21
MJE703vtest:80
MJE703htest:1000100
- MJE703atest:4
MJE703wtest:40
MJE703代换 MJE703用什么型号代替:BD262A,BD680,BD780,FC50B,2N6036,
MJE703价格
参考价格:¥1.2952
型号:MJE703G 品牌:ONSemi 备注:这里有MJE703多少钱,2026年最近7天走势,今日出价,今日竞价,MJE703批发/采购报价,MJE703行情走势销售排行榜,MJE703报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJE703 | DARLINGTON POWER TRANSISTORS COMPLEMENTARY These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M | ONSEMI 安森美半导体 | ||
MJE703 | NPN (HIGH DC CURRENT GAIN)
| SAMSUNG 三星 | ||
MJE703 | COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices. | CENTRAL | ||
MJE703 | 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series | MOTOROLA 摩托罗拉 | ||
MJE703 | Monolithic Construction With Built-in Base- Emitter Resistors Monolithic Construction With Built-in Base-Emitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 | FAIRCHILD 仙童半导体 | ||
MJE703 | isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -80 V • DC Current Gain— : hFE = 750(Min) @ IC= -2 A = 100(Min) @ IC= -4A • Complement to Type MJE803 APPLICATIONS • Designed for general-purpose amplifier and low-speed switching ap | ISC 无锡固电 | ||
MJE703 | Plastic Darlington Complementary Silicon Power Transistors ... designed for general-purpose amplifier and low-speed switching applications. • High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
MJE703 | 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT | ETC 知名厂家 | ETC | |
MJE703 | Trans Darlington PNP 80V 4A 3-Pin(3+Tab) TO-225 Bulk | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
MJE703 | Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington | CENTRAL | ||
MJE703 | 封装/外壳:TO-225AA,TO-126-3 包装:托盘 描述:TRANS PNP DARL 80V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | ||
MJE703 | 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT 文件:84.77 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | ||
Plastic Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M | ONSEMI 安森美半导体 | |||
POWER TRANSISTORS(4.0A,60-80V,40W) PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat | MOSPEC 统懋 | |||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector–Emitter Breakdown Voltage— : V(BR)CEO =-80 V • DC Current Gain— : hFE = 750(Min) @ IC=-2A • Complement to Type MJE803T APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications | ISC 无锡固电 | |||
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT 文件:84.77 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:TO-225AA,TO-126-3 包装:管件 描述:TRANS PNP DARL 80V 4A TO126-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
Silicon Controlled Rectifiers Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P | MOTOROLA 摩托罗拉 | |||
Silicon Controlled Rectifiers Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P | MOTOROLA 摩托罗拉 | |||
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 130.0 Watts Push - Pull Package style AH General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. | POLYFET | |||
Semiconductor Laser for LBPLaser Beam Printers 文件:41.54 Kbytes Page:2 Pages | PANASONIC 松下 |
MJE703产品属性
- 类型
描述
- Case:
TO-126
- Configuration/ Description:
PNP Darlington
- Polarity:
PNP
- IC MAX:
4A
- PD MAX:
40W
- VCEO MAX:
80V
- hFE MIN:
750
- @VCE:
3V
- VCE(SAT) MAX:
2.8V
- @IC:
2A
- @IB:
40mA
- fT MIN:
1MHz
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
TO-126 |
50000 |
|||||
ON |
2025+ |
TO-225 |
3000 |
原装正品现货供应商原厂渠道物美价优 |
|||
ON/安森美 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ON/安森美 |
22+ |
N/A |
21001 |
现货,原厂原装假一罚十! |
|||
ON/安森美 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
ON |
22+ |
TO-126 |
20000 |
公司只有原装 品质保障 |
|||
ON |
23+ |
TO-126 |
168 |
正规渠道,只有原装! |
|||
MOTOROLA/摩托罗拉 |
23+ |
TO-225AATO-126 |
24190 |
原装正品代理渠道价格优势 |
|||
MOTOROLA |
26+ |
SOT-223 |
86720 |
全新原装正品价格最实惠 承诺假一赔百 |
|||
ON |
24+ |
TO-225 |
8866 |
MJE703规格书下载地址
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DdatasheetPDF页码索引
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