DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

NPN (HIGH DC CURRENT GAIN)

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices.

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

Monolithic Construction With Built-in Base- Emitter Resistors

Monolithic Construction With Built-in Base-Emitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -80 V • DC Current Gain— : hFE = 750(Min) @ IC= -2 A = 100(Min) @ IC= -4A • Complement to Type MJE803 APPLICATIONS • Designed for general-purpose amplifier and low-speed switching ap

Plastic Darlington Complementary Silicon Power Transistors

... designed for general-purpose amplifier and low-speed switching applications. • High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

Trans Darlington PNP 80V 4A 3-Pin(3+Tab) TO-225 Bulk

Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington

封装/外壳：TO-225AA，TO-126-3 包装：托盘 描述：TRANS PNP DARL 80V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

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Plastic Darlington Complementary Silicon Power Transistors

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector–Emitter Breakdown Voltage— : V(BR)CEO =-80 V • DC Current Gain— : hFE = 750(Min) @ IC=-2A • Complement to Type MJE803T APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

文件：84.77 Kbytes Page：6 Pages

封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS PNP DARL 80V 4A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

130.0 Watts Push - Pull Package style AH General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Semiconductor Laser for LBPLaser Beam Printers

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