12.0 AMP. Schottky Barrier Rectifiers

FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

封装/外壳：DO-201AD，轴向 包装：卷带（TR） 描述：DIODE SCHOTTKY 20V 12A DO201AD 分立半导体产品 二极管 - 整流器 - 单

12A, 20V, Schottky Rectifier

12.0 AMP. Schottky Barrier Rectifiers

文件：501.77 Kbytes Page：2 Pages

Schottky Barrier Rectifier

文件：201.05 Kbytes Page：4 Pages

12.0AMPS. Schottky Barrier Rectifiers

文件：249.67 Kbytes Page：4 Pages

封装/外壳：DO-201AD，轴向 包装：卷带（TR） 描述：DIODE SCHOTTKY 20V 12A DO201AD 分立半导体产品 二极管 - 整流器 - 单

12.0 AMP. Schottky Barrier Rectifiers

文件：501.77 Kbytes Page：2 Pages

12.0AMPS. Schottky Barrier Rectifiers

文件：249.67 Kbytes Page：4 Pages

Schottky Barrier Rectifier

文件：201.05 Kbytes Page：4 Pages

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

Transmissive Optical Sensor with Phototransistor Output

Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Features ● Compact construction ● No setting efforts ● Polyc

Battery power unit

文件：123.15 Kbytes Page：24 Pages

Battery power unit

文件：123.15 Kbytes Page：24 Pages