Transmissive Optical Sensor with Phototransistor Output

Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Features ● Compact construction ● No setting efforts ● Polyc

Subminiature Transmissive Optical Sensor with Transistor Output

DESCRIPTION The TCPT1350X01 is a compact transmissive sensor that includes an infrared emitter and a phototransistor detector, located face-to-face in a surface mount package. TCPT1350X01 is especially designed to meet high operating temperature requirements and is released for operating temperat

Transmissive Optical Sensor with Phototransistor Output

DESCRIPTION The TCST1103, TCST1202, and TCST1300 are transmissive sensors that include an infrared emitter and phototransistor, located face-to-face on the optical axes in a leaded package which blocks visible light. These part numbers include options for aperture width. FEATURES • Packag

Transmissive Optical Sensor with Phototransistor Output

Package type: leaded\nDetector type: phototransistor\nDimensions (L x W x H in mm): 11.9 x 6.3 x 10.8;

封装/外壳：PCB 安装 包装：散装 描述：SENSOR OPT SLOT PHOTOTRAN PCB MT 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 晶体管输出

Transmissive Optical Sensor with Phototransistor Output

文件：153.64 Kbytes Page：9 Pages

Reflective Optical Sensor with Transistor Output

文件：263.57 Kbytes Page：11 Pages

Transmissive Optical Sensor with Phototransistor Output

文件：266.57 Kbytes Page：12 Pages

Transmissive Optical Sensor with Phototransistor Output

文件：241.51 Kbytes Page：12 Pages

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

Battery power unit

文件：123.15 Kbytes Page：24 Pages

Battery power unit

文件：123.15 Kbytes Page：24 Pages