Automotive N-Channel 100 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Automotive N-Channel 100 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Automotive N-Channel 100 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Automotive N-Channel 40 V (D-S) 175 째C MOSFET

文件：220.02 Kbytes Page：10 Pages

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Automotive N-Channel 100 V (D-S) 175 째C MOSFET

文件：223 Kbytes Page：10 Pages

Automotive N-Channel 100 V (D-S) 175 째C MOSFET

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Automotive N-Channel 100 V (D-S) 175 °C MOSFET

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 92A, RDS(ON) = 8.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 10.5mW @VGS = 4.5V.

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