SIPMOS횘 Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature

OptiMOS Power-Transistor

Feature • N-Channel • Enhancement mode • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated

OptiMOS Power-Transistor

Feature • N-Channel • Logic Level • Low on-resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching applications

N-Channel 30-V (D-S) MOSFET

文件：1.68838 Mbytes Page：8 Pages

OptiMOS Power-Transistor

N-Channel 30-V (D-S) MOSFET

文件：1.68834 Mbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.68829 Mbytes Page：8 Pages

OptiMOS Power-Transistor

30V N-Channel Power

Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances

30V N-Channel Power

General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on

N-Channel 30-V (D-S) MOSFET

文件：1.01839 Mbytes Page：8 Pages

30A竊?0V N-CHANNEL MOSFET

文件：235.42 Kbytes Page：5 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.0152 Mbytes Page：8 Pages