位置：首页 > IC中文资料第7863页 > SPB02N60C3
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SPB02N60C3 | CoolMOSPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
SPB02N60C3 | CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
SPB02N60C3 | IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
SPB02N60C3 | N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
CoolMOSPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.71683 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | |
SPB02N60C3产品属性
- 类型
描述
- 型号
SPB02N60C3
- 功能描述
MOSFET COOL MOS N-CH 650V 1.8A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINE0N |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
Infineon(英飞凌) |
23+ |
TO-263 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
收购IC |
1525+ |
D2PAK |
5083 |
长期现金收购原装IC |
|||
INFINEON/英飞凌 |
22+ |
TO-263 |
60620 |
5000 |
|||
INFINEON/英飞凌 |
21+ |
SOT263 |
23600 |
十年以上分销商原装进口件服务型企业0755-83790645 |
|||
INFINEON |
1709+ |
TO-263/D2-PAK |
32500 |
普通 |
|||
INENOI |
20+ |
SOT263 |
3000 |
全新原装,价格优势 |
|||
INFINEON/英飞凌 |
21+ |
TO-263 |
6000 |
原装正品 |
|||
INFINEON |
23/22+ |
TO263 |
2000 |
全线可订货.含税开票 |
|||
INFINEON |
21+ |
TO-263 |
9866 |
SPB02N60C3芯片相关品牌
SPB02N60C3规格书下载地址
SPB02N60C3参数引脚图相关
- t5007
- t5006
- t4242
- t40
- t2222
- t2010
- t100k
- sw-262
- stm32f103
- stm32
- stk
- stc89c52rc
- stc12c5a60s2
- st70
- st18
- sst25vf040
- sr2m
- spwm
- spice模型
- spd
- SPB601
- SPB600F
- SPB600
- SPB470F
- SPB350F
- SPB25
- SPB-24
- SPB230F
- SPB2045
- SPB150F
- SPB1207
- SPB1205
- SPB101
- SPB090F
- SPB09
- SPB075F
- SPB0704
- SPB0703
- SPB05
- SPB03E-12
- SPB03E-05
- SPB03C-15
- SPB03C-12
- SPB03C-05
- SPB03B-15
- SPB03B-12
- SPB03B-05
- SPB03A-15
- SPB03A-12
- SPB03A-05
- SPB03_11
- SPB-03
- SPB03
- SPB02N60S5ATMA1
- SPB02N60S5_07
- SPB02N60S5 E3045A
- SPB02N60S5
- SPB02N60C3ATMA1
- SPB02N60C3_07
- SPB-02
- SPB-01
- SPB-002
- SPB 600
- SPB 2,5/ 1
- SPB
- SP-ASY-JSAT-L
- SP-ASY-JSAM-S
- SP-ASY-JSAM-B
- SP-ASY-JSA6C
- SP-ASY-JSA6
- SP-ASY-CG-V27SB
- SPARX-5
- SPARS-CM012-002
- SPARS-CM012-001
- SPARS-CM005-002
- SPARS-CM005-001
- SPANSION-SOLUTIONS_KIT
- SPANSION-DISTRIBUTOR-TOOLKIT
- SPANSION EMBEDDED GUIDE Q3-08
- SPANSION EMBEDDED GUIDE Q2-08
- SPAN02
- SP-AL
- SPA6191
- SPA612E
- SPA612D
- SPA612C
- SPA612
- SPA600F
- SPA560M
- SPA560K
- SPA560J
- SPA560
- SPA555N
- SPA555M
- SPA555
- SPA513
- SPA470F
- SPA4191
SPB02N60C3数据表相关新闻
SPC5200CBV400B
https://hfx03.114ic.com/
2022-3-28SP8K24-TB
SP8K24-TB
2021-10-20SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
2019-12-16SPB17N80C3BSZ520N15NS3G特价热销
SPB17N80C3BSZ520N15NS3G电信，供电系统
2019-8-6SPA07N60C3
SPA07N60C3
2019-4-24SPA20N60CFD-CoolMOS功率晶体管
特点•新的革命高电压技术•内在的快速恢复体二极管•极低的反向恢复电荷•超低栅极电荷•至尊的dv/dt的额定•高峰值电流能力•定期雪崩额定•合格的为工业级应用根据JEDEC0）•无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
