位置：首页 > IC中文资料 > ISPD02N60C3
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
ISPD02N60C3 | N-ChannelMOSFETTransistor •DESCRITION •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMOSPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | | |
CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.71683 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISOCOM |
23+ |
14+ |
38493 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
ISOCOM |
23+ |
DIP-6 |
9888 |
专做原装正品,假一罚百! |
|||
ISOCOM |
25+ |
DIPSOP |
65248 |
百分百原装现货 实单必成 |
|||
Isocom |
24+ |
NA |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ISOCOM |
24+ |
40000 |
|||||
ISOCOM |
23+ |
22646 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
ISOCOM |
12+ |
DIPSOP |
23108 |
原装现货 |
ISPD02N60C3芯片相关品牌
ISPD02N60C3规格书下载地址
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DdatasheetPDF页码索引
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