位置：首页 > IC中文资料第493页 > SPP35N10
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SPP35N10 | SIPMOSPower-Transistor 文件：480.7 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
SPP35N10 | N-Channel100-V(D-S)MOSFET 文件：951.86 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
FastSwitching 文件：49.94 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-Channel100-V(D-S)MOSFET 文件：982.74 Kbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-ChannelSuperTrenchPowerMOSFET 文件：1.0282 Mbytes Page：7 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 |  | | |
N-Channel100-V(D-S)MOSFET 文件：984.26 Kbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
POWERMOSFIELD-EFFECTTRANSISTORSN-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS 文件：217.02 Kbytes Page：4 Pages | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | |
SPP35N10产品属性
- 类型
描述
- 型号
SPP35N10
- 功能描述
MOSFET N-CH 100V 35A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VB |
2019 |
P-TO220-3-1 |
55000 |
绝对原装正品假一罚十! |
|||
Infineon |
2022+ |
TO-220 |
57550 |
||||
INFINEON |
20+ |
TO220-3 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
Infineon |
23+ |
TO-220 |
30000 |
代理全新原装现货,价格优势 |
|||
Infineo |
21+ |
TO-220 |
12588 |
原装现货价格优势 |
|||
INFINEON/英飞凌 |
23+ |
TO220 |
6000 |
只有原装正品,老板发话合适就出 |
|||
INFINEON |
23+ |
T0-220 |
7936 |
||||
INFINEON/英飞凌 |
23+ |
TO-220 |
24190 |
原装正品代理渠道价格优势 |
|||
VBSEMI |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
|||
INFINEON |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
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SPP35N10规格书下载地址
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2020-11-10
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