位置：首页 > IC中文资料第493页 > SPP35N10
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPP35N10 | SIPMOS Power-Transistor 文件：480.7 Kbytes Page：8 Pages | Infineon 英飞凌 |   | |
SPP35N10 | N-Channel 100-V (D-S) MOSFET 文件：951.86 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
SPP35N10 | MOSFET N-CH 100V 35A TO-220AB | Infineon 英飞凌 | | |
N-Channel 100-V (D-S) MOSFET 文件：982.74 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Fast Switching 文件：49.94 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel Super Trench Power MOSFET 文件：1.0282 Mbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
N-Channel 100-V (D-S) MOSFET 文件：984.26 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS 文件：217.02 Kbytes Page：4 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
SPP35N10产品属性
- 类型
描述
- 型号
SPP35N10
- 功能描述
MOSFET N-CH 100V 35A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
英飞凌 |
06+ |
TO-220 |
4500 |
原装库存 |
|||
Infineon |
24+ |
TO-220 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INFINEON |
NEW |
T0-220 |
7936 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
INFINEON |
22+ |
TO220-3 |
18428 |
原装现货库存.价格优势 |
|||
VBsemi |
24+ |
TO220 |
5000 |
全新原装正品,现货销售 |
|||
INFINEON/英飞凌 |
23+ |
TO-220 |
24190 |
原装正品代理渠道价格优势 |
|||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
20300 |
INFINEON/英飞凌原装特价SPP35N10即刻询购立享优惠#长期有货 |
|||
INFINEON |
24+ |
TO-220 |
14 |
||||
INFINE0N |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
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2020-11-10
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