位置：首页 > IC中文资料第8367页 > RFH35N10
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RFH35N10 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 35A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 55mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 |   | |
RFH35N10 | Power MOS Field-Effect Transistors 文件：86.22 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
RFH35N10 | POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS 文件：217.02 Kbytes Page：4 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
RFH35N10 | N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS | NJS | | |
N-Channel 100-V (D-S) MOSFET 文件：982.74 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Fast Switching 文件：49.94 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel Super Trench Power MOSFET 文件：1.0282 Mbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
N-Channel 100-V (D-S) MOSFET 文件：984.26 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | |
RFH35N10产品属性
- 类型
描述
- 型号
RFH35N10
- 功能描述
POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TE/泰科 |
24+ |
NA/ |
2676 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INTERSIL/FSC |
NEW |
TO-218 |
28610 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
SCHRACK |
12+ |
SMD |
19 |
原厂原装仓库现货,欢迎咨询 |
|||
HARRIS(哈利斯) |
20+ |
TO-218-Isolated |
3000 |
||||
SCHRACK |
24+ |
SMD |
1200 |
全新原装数量均有多电话咨询 |
|||
JST |
60 |
代理优势渠道,有上都有,只有原装,实单给接受价! |
|||||
JST/日压 |
2508+ |
/ |
226570 |
一级代理，原装现货 |
|||
哈里斯 |
06+ |
TO-247 |
2000 |
原装库存 |
|||
24+ |
N/A |
1240 |
|||||
JST/日压 |
22+ |
连接器 |
748228 |
代理-优势-原装-正品-现货*期货 |
RFH35N10芯片相关品牌
RFH35N10规格书下载地址
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2019-3-14
DdatasheetPDF页码索引
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