Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0

New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

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New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

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N-Channel MOSFET Transistor

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500V-900V CoolMOS™ N-Channel Power MOSFET

New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

文件：1.94391 Mbytes Page：15 Pages

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：622.31 Kbytes Page：15 Pages

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：622.31 Kbytes Page：15 Pages

20A N-Channel Power MOSFET

Features ● RDS(ON) = 0.35Ω ● Ultra low gate charge ( Typical 150 nC ) ● Low reverse transfer capacitance ( CRSS = typical 36 pF ) ● Fast switching capability ● Avalanche energy specified ● Improved dv/dt capability, high ruggedness Application ● Power factor correction（PFC） ● Switched m

20A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC20N65 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

MOSFET 650V, 20A N-CHANNEL

FEATURE •Proprietary New Planar Technology •R DS(ON),typ. typ.=0.38 Ω@V GS =10V •Low Gate Charge Minimize Switching Loss •Fast Recovery Body Diode DESCRIPTION The AM20N65 is available in TO 220 and TO220F Packages. APPLICATIONS •Adaptor •TV Main Power •SMPS Power Supply •LCD Panel

20A 650V N-channel enhancement mode field effect transistor

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20 Amps,650 Volts N-CHANNEL MOSFET

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