Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) • Pb-free lead plating; RoHS complian

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode

Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed for: • Soft switching PWM Stages • LC

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.7Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

Cool MOS??Power Transistor

Cool MOS™ Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

New revolutionary high voltage technology Ultra low gate charge

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New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

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500V-900V CoolMOS™ N-Channel Power MOSFET

New revolutionary high voltage technology Ultra low gate charge

文件：1.30229 Mbytes Page：15 Pages

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：625.63 Kbytes Page：15 Pages

500V-900V CoolMOS™ N-Channel Power MOSFET

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Cool MOS??Power Transistor

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Cool MOS??Power Transistor Feature New revolutionary high voltage technology

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Cool MOS??Power Transistor Feature New revolutionary high voltage technology

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N-Channel 6 50V (D-S) Power MOSFET

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N-Channel Power MOSFET

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N-Channel Power MOSFET

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Plastic-Encapsulate MOSFETS

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N-Channel Power MOSFET

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