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SPP07N60价格
参考价格：￥7.5125
型号：SPP07N60C3 品牌：Infineon 备注：这里有SPP07N60多少钱，2024年最近7天走势，今日出价，今日竞价，SPP07N60批发/采购报价，SPP07N60行情走势销售排行榜，SPP07N60报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   | |
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScomplian | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode Features •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) CoolMOSCFDdesignedfor: •SoftswitchingPWMStages •LC | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.7Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMOS??PowerTransistor CoolMOS™PowerTransistor •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Optimizedcapacitances •Improvednoiseimmunity | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NewrevolutionaryhighvoltagetechnologyUltralowgatecharge 文件：1.30229 Mbytes Page：15 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated 文件：625.63 Kbytes Page：15 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NewrevolutionaryhighvoltagetechnologyUltralowgatecharge 文件：1.30229 Mbytes Page：15 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated 文件：625.63 Kbytes Page：15 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOS??PowerTransistor 文件：108.07 Kbytes Page：10 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology 文件：534.26 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology 文件：534.26 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-Channel650V(D-S)PowerMOSFET 文件：2.15004 Mbytes Page：10 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-ChannelPowerMOSFET 文件：398.75 Kbytes Page：4 Pages | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | | |
N-ChannelPowerMOSFET 文件：1.00382 Mbytes Page：3 Pages | ZPSEMI ZP Semiconductor |  | | |
Plastic-EncapsulateMOSFETS 文件：1.029869 Mbytes Page：3 Pages | ZPSEMI ZP Semiconductor | | | |
N-ChannelPowerMOSFET 文件：1.70485 Mbytes Page：4 Pages | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | | |
SPP07N60产品属性
- 类型
描述
- 型号
SPP07N60
- 制造商
Infineon Technologies AG
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON品牌 |
2016+ |
TO-220 |
6528 |
房间原装进口现货假一赔十 |
|||
英飞凌 |
TO-220 |
7993 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
IR |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
|||
infineon |
2020+ |
P-TO220-3-1 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
INFINEON-英飞凌 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
Infineon |
2315+ |
TO-220 |
3866 |
优势代理渠道,原装现货,可全系列订货 |
|||
INFINEON |
1645+ |
TO-220AB |
8500 |
只做原装进口,假一罚十 |
|||
INFINEON |
22+ |
原厂原封 |
108719 |
原装现货库存.价格优势 |
|||
INFINEON |
23+ |
T0-220 |
7936 |
||||
INFINEON |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
SPP07N60芯片相关品牌
SPP07N60规格书下载地址
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