Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in SOT 223 • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Qualified according to JEDEC0) for target applications

New revolutionary high voltage technology Worldwide best RDS in SOT 223

文件：5.04853 Mbytes Page：10 Pages

Cool MOS™ Power Transistor

New revolutionary high voltage technology Worldwide best RDS in SOT 223

文件：5.04853 Mbytes Page：10 Pages

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.95Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device per

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Qualified according to JEDEC0) for target applications

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

N-Channel 6 50V (D-S) Power MOSFET

文件：2.1288 Mbytes Page：10 Pages

N-Channel MOSFET Transistor

文件：335.62 Kbytes Page：2 Pages