型号 功能描述 生产厂家&企业 LOGO 操作
SPU04N60S5

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

Infineon

英飞凌

SPU04N60S5

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

Infineon

英飞凌

SPU04N60S5

isc N-Channel MOSFET Transistor

• FEATURES • With TO-251(IPAK) packaging • High speed switching • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • DC-DC converters • Motor control • Switching applications

ISC

无锡固电

SPU04N60S5

N-Channel 650V (D-S) Power MOSFET

文件:1.90692 Mbytes Page:9 Pages

VBSEMI

微碧半导体

SPU04N60S5

Cool MOS Power Transistor

文件:895.21 Kbytes Page:12 Pages

Infineon

英飞凌

Cool MOS Power Transistor

文件:895.21 Kbytes Page:12 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.95Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device per

ISC

无锡固电

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

Infineon

英飞凌

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Qualified according to JEDEC0) for target applications

Infineon

英飞凌

N-Channel 6 50V (D-S) Power MOSFET

文件:2.1288 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-Channel MOSFET Transistor

文件:335.62 Kbytes Page:2 Pages

ISC

无锡固电

SPU04N60S5产品属性

  • 类型

    描述

  • 型号

    SPU04N60S5

  • 功能描述

    MOSFET COOL MOS N-CH 600V 4.5A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-14 11:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
NA/
2900
优势代理渠道,原装正品,可全系列订货开增值税票
INFINEON
2016+
TO251
6000
公司只做原装,假一罚十,可开17%增值税发票!
INFINEON
24+
TO-251
11000
原装正品 有挂有货 假一赔十
INFINEON/英飞凌
22+
TO251
12245
现货,原厂原装假一罚十!
INFINEON/英飞凌
23+
TO-251
30000
全新原装现货,价格优势
ADI
23+
TO251
8000
只做原装现货
INFINEON/英飞凌
23+
TO-251-3
50000
全新原装正品现货,支持订货
inf进口原
21+
TO-251
4364
原装现货假一赔十
infineon
23+24
TO-251
29840
主营MOS管,二极.三极管,肖特基二极管.功率三极管
INFINEON
23+
TO251
4444
原厂原装正品

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