Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Qualified according to JEDEC0) for target applications

New revolutionary high voltage technology Ultra low gate chargeExtreme dv/dt rated

文件：4.70297 Mbytes Page：9 Pages

New revolutionary high voltage technology Ultra low gate chargeExtreme dv/dt rated

New revolutionary high voltage technology Ultra low gate chargeExtreme dv/dt rated

文件：4.70297 Mbytes Page：9 Pages

N-Channel MOSFET Transistor

• DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤1.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.4Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perf

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

N-Channel 650 V (D-S) MOSFET

文件：2.54815 Mbytes Page：8 Pages

N-Channel 650V (D-S) Power MOSFET

文件：2.51693 Mbytes Page：8 Pages