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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelMOSFETTransistor •DESCRITION •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMOSPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.71683 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
23+ |
SMD |
27120 |
全新原装现货,专业代理热卖 |
|||
INFINEON/英飞凌 |
23+ |
NA/ |
1000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON |
1709+ |
TO-263/D2-PAK |
32500 |
普通 |
|||
Infineon(英飞凌) |
23+ |
TO-263 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON/英飞凌 |
2022 |
SOT263 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
infineon |
23+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
INFINEON |
22+ |
TO-263 |
28600 |
只做原装正品现货假一赔十一级代理 |
|||
INFINEON |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
|||
INFINEON/英飞凌 |
21+ |
SOT263 |
23600 |
十年以上分销商原装进口件服务型企业0755-83790645 |
|||
infineon |
1415+ |
P-TO263-3-2 |
28500 |
全新原装正品,优势热卖 |
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SPP02N60C3IC规格书下载地址
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2020-11-10
DdatasheetPDF页码索引
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