位置：首页 > IC中文资料第1959页 > SPI11N60CFD
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPI11N60CFD | New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated 文件：1.56068 Mbytes Page：12 Pages | INFINEON 英飞凌 |   | |
SPI11N60CFD | isc N-Channel MOSFET Transistor 文件：331.19 Kbytes Page：2 Pages | ISC 无锡固电 | | |
SPI11N60CFD | 500V-900V CoolMOS™ N-Channel Power MOSFET | INFINEON 英飞凌 | | |
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications | MOTOROLA 摩托罗拉 | | ||
SHORT CIRCUIT RATED LOW ON-VOLTAGE Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications | ONSEMI 安森美半导体 | | ||
SHORT CIRCUIT RATED LOW ON-VOLTAGE Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block | ONSEMI 安森美半导体 | | ||
Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge | INFINEON 英飞凌 | | ||
Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge • Pb-free lead plating; RoHS compliant • Qualified accordi | INFINEON 英飞凌 | |
SPI11N60CFD产品属性
- 类型
描述
- 型号
SPI11N60CFD
- 功能描述
MOSFET COOL MOS PWR TRANS 650V 0.44 Ohms
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
08+ |
TO-262 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINE0N |
23+ |
TO-262-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
infineon |
25+ |
TO262 |
3365 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
Infineon Technologies |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
inf进口原 |
25+23+ |
TO-262 |
22797 |
绝对原装正品全新进口深圳现货 |
|||
INFINEON |
25+ |
TOP220 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
INFINEON |
24+ |
TO-262 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INFINEON/英飞凌 |
2407+ |
con |
10750 |
只有原装!量大可以订!一片起卖! |
|||
INFINEON |
24+ |
PG-TO262-3I2PAK(TO |
8866 |
SPI11N60CFD规格书下载地址
SPI11N60CFD参数引脚图相关
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SPI11N60CFD数据表相关新闻
SPH1000J
SPH1000J
2021-10-25SPIRIT1QTR假一罚十
做的是诚信，卖的是良心。
2021-3-4SPH-002T-P0.5S
属性 参数值 商品目录 压接端子 触头材料 磷青铜 触头镀层 锡 线规 - AWG 24~30 镀层厚度 - 线规 - mm2 0.05~0.22 产品类型 压线端子 认证 RoHS
2020-11-13SPIRIT1QTR
Bluetooth 射频收发器 , Zigbee 射频收发器 , SX126x 射频收发器 , - 16 dBm to + 13 dBm ASK, FSK 射频收发器 , 8DPSK, DQPSK, GFSK 射频收发器 , 142 MHz to 1050 MHz 16 dBm 射频收发器
2020-10-9SPI-7210 电机驱动 进口原装 假一罚十
使用 2 相步进电机双极驱动集成电路时，可支持的电机电源电压为 36V(max)/电机电流为 ±1.5A (SPI-7215M)，±1.0A (SPI-7210M)。
2020-6-11SPH252012H4R7MTSPH2520系列绕线贴片功18138231376
联系人：刘冬英 电话：0755-83203002 手机：18138231376 QQ号：1546282226、微信号：18138231376 公司名称：深圳市光华微科技有限公司 Shenzhen Guanghua Micro Technology Co.， Ltd 公司地址：深圳市福田区振兴路华匀大厦1栋712室
2019-10-14
DdatasheetPDF页码索引
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