OptiMOS-P Power - Transistor

Feature • P-Channel • Enhancement mode • Logic Level • High current rating • 175°C operating temperature • Avalanche rated • dv/dt rated

OptiMOS-P Power-Transistor

Features • P-Channel • Enhancement mode • Logic level • 175°C operating temperature • Avalanche rated • dv /dt rated • High current rating • Pb-free lead-plating, RoHS compliant

P-Channel 30 V (D-S) MOSFET

FEATURES • Compliant to RoHS Directive 2002/95/EC

OptiMOS-P Power - Transistor

20V-250V P-Channel Power MOSFET

OptiMOS-P Power-Transistor

OptiMOS짰-P Power-Transistor

文件：391.1 Kbytes Page：9 Pages

OptiMOS짰-P Power-Transistor

文件：391.1 Kbytes Page：9 Pages

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -47A, RDS(ON) =20mΩ @VGS = -10V. RDS(ON) =32mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -47A, RDS(ON) =20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =32mW @VGS = -4.5V. Lead free product is acquired.

P-Channel 30 V (D-S) MOSFET

文件：1.0229 Mbytes Page：8 Pages

P-Channel 30 V (D-S) MOSFET

文件：1.02287 Mbytes Page：8 Pages

P-Channel 30-V (D-S) MOSFET

文件：967.38 Kbytes Page：8 Pages