SIPMO Power Transistor

SIPMOS® Power Transistor • N-Channel • Enhancement mode • Avalanche rated

Cool MOS Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

N-Channel MOSFET Transistor

• DESCRITION • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

N-Channel MOSFET Transistor

• DESCRITION • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target app

Cool MOS Power Transistor

文件：1.01922 Mbytes Page：13 Pages

Cool MOS Power Transistor

文件：1.22437 Mbytes Page：13 Pages

Cool MOS Power Transistor

文件：1.22437 Mbytes Page：13 Pages

Cool MOS Power Transistor

文件：1.01922 Mbytes Page：13 Pages

Power MOSFET

文件：1.07863 Mbytes Page：9 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.70191 Mbytes Page：8 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.70195 Mbytes Page：8 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.70167 Mbytes Page：8 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.70169 Mbytes Page：8 Pages

N CHANNEL ENHANCEMENT MODE

文件：701.78 Kbytes Page：6 Pages