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SPB04N60价格
参考价格:¥4.1308
型号:SPB04N60C3 品牌:Infineon 备注:这里有SPB04N60多少钱,2024年最近7天走势,今日出价,今日竞价,SPB04N60批发/采购报价,SPB04N60行情走势销售排行榜,SPB04N60报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
CoolMOSPowerTransistor 文件:429.54 Kbytes Page:13 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
CoolMOSPowerTransistor 文件:429.54 Kbytes Page:13 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-Channel650V(D-S)MOSFET 文件:1.94923 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
PowerMOSFET 文件:1.94027 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
PowerMOSFET 文件:1.94029 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-CHANNELENHANCEMENTMODE 文件:62.82 Kbytes Page:5 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | |||
N-CHANNELENHANCEMENTMODE 文件:64.16 Kbytes Page:5 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 |
SPB04N60产品属性
- 类型
描述
- 型号
SPB04N60
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
Cool MOS⑩ Power Transistor
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINE0N |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
infineon |
2020+ |
P-TO263-3-2 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
INFINEON |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
I |
23+ |
P-TO263-3-2 |
10000 |
公司只做原装正品 |
|||
INFINEON |
1709+ |
TO-263/D2-PAK |
32500 |
普通 |
|||
INFINEON-英飞凌 |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
VBSEMI |
19+ |
P-TO263-3-2 |
29600 |
绝对原装现货,价格优势! |
|||
INFINEON/英飞凌 |
2022+ |
SOT263 |
14680 |
原厂代理 终端免费提供样品 |
|||
INFINEON/英飞凌 |
21+ |
TO263-3-2 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
INFINEON/英飞凌 |
24+ |
TO263 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
SPB04N60规格书下载地址
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DdatasheetPDF页码索引
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