SPB04N60价格

参考价格:¥4.1308

型号:SPB04N60C3 品牌:Infineon 备注:这里有SPB04N60多少钱,2024年最近7天走势,今日出价,今日竞价,SPB04N60批发/采购报价,SPB04N60行情走势销售排行榜,SPB04N60报价。
型号 功能描述 生产厂家&企业 LOGO 操作

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

CoolMOSPowerTransistor

文件:429.54 Kbytes Page:13 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

CoolMOSPowerTransistor

文件:429.54 Kbytes Page:13 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

N-Channel650V(D-S)MOSFET

文件:1.94923 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

PowerMOSFET

文件:1.94027 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

PowerMOSFET

文件:1.94029 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-CHANNELENHANCEMENTMODE

文件:62.82 Kbytes Page:5 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNELENHANCEMENTMODE

文件:64.16 Kbytes Page:5 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

SPB04N60产品属性

  • 类型

    描述

  • 型号

    SPB04N60

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    Cool MOS⑩ Power Transistor

更新时间:2024-6-17 14:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINE0N
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
infineon
2020+
P-TO263-3-2
16800
绝对原装进口现货,假一赔十,价格优势!?
INFINEON
24+
TO-263
90000
一级代理商进口原装现货、假一罚十价格合理
I
23+
P-TO263-3-2
10000
公司只做原装正品
INFINEON
1709+
TO-263/D2-PAK
32500
普通
INFINEON-英飞凌
24+25+/26+27+
TO-263-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
VBSEMI
19+
P-TO263-3-2
29600
绝对原装现货,价格优势!
INFINEON/英飞凌
2022+
SOT263
14680
原厂代理 终端免费提供样品
INFINEON/英飞凌
21+
TO263-3-2
9852
只做原装正品现货!或订货假一赔十!
INFINEON/英飞凌
24+
TO263
58000
全新原厂原装正品现货,可提供技术支持、样品免费!

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