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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultralowcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
N-Channel650V(D-S)PowerMOSFET 文件：3.20783 Mbytes Page：10 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated 文件：599.57 Kbytes Page：14 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
23+ |
NA/ |
10 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
infineon |
2020+ |
P-TO220-3-31 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
INFINCON |
1926+ |
TO-220 |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
INFINEON |
TO220F |
893993 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
Infineon(英飞凌) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
|||
INFINEON-英飞凌 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
INFINEON |
23+ |
TO-220F |
7936 |
||||
Infineon(英飞凌) |
23+ |
TO-220 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON/英飞凌 |
2122+ |
TO220 |
10000 |
全新原装进口,价格美丽 |
|||
INFINEON |
23/22+ |
TO220F |
2000 |
全线可订货.含税开票 |
SPB03N60C3MOS芯片相关品牌
SPB03N60C3MOS规格书下载地址
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SPB03N60C3MOS数据表相关新闻
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特点•新的革命高电压技术•内在的快速恢复体二极管•极低的反向恢复电荷•超低栅极电荷•至尊的dv/dt的额定•高峰值电流能力•定期雪崩额定•合格的为工业级应用根据JEDEC0）•无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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