位置：首页 > IC中文资料 > ISPD03N60C3
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
ISPD03N60C3 | N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultralowcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | | |
N-Channel650V(D-S)PowerMOSFET 文件：3.20783 Mbytes Page：10 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated 文件：599.57 Kbytes Page：14 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISOCOM |
25+ |
DIPSOP |
65248 |
百分百原装现货 实单必成 |
|||
ISOCOM |
23+ |
DIP-6 |
9888 |
专做原装正品,假一罚百! |
|||
ISOCOM |
23+ |
14+ |
38493 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
ISOCOM |
23+ |
22646 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
ISOCOM |
24+ |
40000 |
|||||
Isocom |
24+ |
NA |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ISOCOM |
12+ |
DIPSOP |
23108 |
原装现货 |
ISPD03N60C3芯片相关品牌
ISPD03N60C3规格书下载地址
ISPD03N60C3参数引脚图相关
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DdatasheetPDF页码索引
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