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SPB02N60S5价格
参考价格：￥4.5306
型号：SPB02N60S5 品牌：Infineon 备注：这里有SPB02N60S5多少钱，2024年最近7天走势，今日出价，今日竞价，SPB02N60S5批发/采购报价，SPB02N60S5行情走势销售排行榜，SPB02N60S5报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SPB02N60S5 | CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
SPB02N60S5 | CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
SPB02N60S5 | IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
SPB02N60S5 | N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformancean | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel650V(D-S)PowerMOSFET 文件：1.68505 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
PowerMOSFET 文件：1.67706 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.71684 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | |
SPB02N60S5产品属性
- 类型
描述
- 型号
SPB02N60S5
- 功能描述
MOSFET COOL MOS N-CH 600V 1.8A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
infineon |
2020+ |
P-TO263-3-2 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
INFINEON |
1822+ |
TO263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINEON |
SOT263 |
893993 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
INFINEON/英飞凌 |
2024+实力库存 |
TO263-3-2 |
20000 |
只做原厂渠道 可追溯货源 |
|||
INFINEON/英飞凌 |
新批次 |
PG-TO263-3 |
4326 |
||||
INFINEON-英飞凌 |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
INFINEON |
23+ |
TO-263 |
7936 |
||||
Infineon(英飞凌) |
23+ |
TO-263 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON |
08+(pbfree) |
P-TO263-3-2 |
8866 |
||||
INFINEON |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
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DdatasheetPDF页码索引
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