位置：首页 > IC中文资料第8785页 > SPI11N65C3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPI11N65C3 | Cool MOS??Power Transistor Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for ta | Infineon 英飞凌 |   | |
SPI11N65C3 | isc N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.38Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
SPI11N65C3 | New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated 文件：1.01964 Mbytes Page：15 Pages | Infineon 英飞凌 | | |
SPI11N65C3 | Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：574.74 Kbytes Page：15 Pages | Infineon 英飞凌 | | |
SPI11N65C3 | 500 V-950 V CoolMOS™ N 沟道功率 MOSFET | Infineon 英飞凌 | | |
N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.38Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Cool MOS??Power Transistor Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for ta | Infineon 英飞凌 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.033599 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated 文件：1.01964 Mbytes Page：15 Pages | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：574.74 Kbytes Page：15 Pages | Infineon 英飞凌 | |
SPI11N65C3产品属性
- 类型
描述
- 型号
SPI11N65C3
- 功能描述
MOSFET COOL MOS N-CH 650V 11A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
20+ |
TO-262 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
Infineon(英飞凌) |
24+ |
TO-262 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON/英飞凌 |
24+ |
TO-262 |
312 |
原装正品/假一罚十/支持样品/可开发票 |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
3607 |
原厂直销,现货供应,账期支持! |
|||
inf进口原 |
25+23+ |
TO-262 |
22796 |
绝对原装正品全新进口深圳现货 |
|||
INFINEON/英飞凌 |
25+ |
TO-262 |
860000 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
24+ |
P-TO262-3-1 |
8866 |
||||
INFINEON |
24+ |
TO-262 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
ADI |
23+ |
TO-262 |
8000 |
只做原装现货 |
SPI11N65C3芯片相关品牌
SPI11N65C3规格书下载地址
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SPI11N65C3数据表相关新闻
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做的是诚信，卖的是良心。
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属性 参数值 商品目录 压接端子 触头材料 磷青铜 触头镀层 锡 线规 - AWG 24~30 镀层厚度 - 线规 - mm2 0.05~0.22 产品类型 压线端子 认证 RoHS
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Bluetooth 射频收发器 , Zigbee 射频收发器 , SX126x 射频收发器 , - 16 dBm to + 13 dBm ASK, FSK 射频收发器 , 8DPSK, DQPSK, GFSK 射频收发器 , 142 MHz to 1050 MHz 16 dBm 射频收发器
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2020-6-11SPH252012H4R7MTSPH2520系列绕线贴片功18138231376
联系人：刘冬英 电话：0755-83203002 手机：18138231376 QQ号：1546282226、微信号：18138231376 公司名称：深圳市光华微科技有限公司 Shenzhen Guanghua Micro Technology Co.， Ltd 公司地址：深圳市福田区振兴路华匀大厦1栋712室
2019-10-14
DdatasheetPDF页码索引
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