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SPA07N60CFD价格
参考价格：￥6.5561
型号：SPA07N60CFD 品牌：INFINEON 备注：这里有SPA07N60CFD多少钱，2026年最近7天走势，今日出价，今日竞价，SPA07N60CFD批发/采购报价，SPA07N60CFD行情走势销售排行榜，SPA07N60CFD报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPA07N60CFD | CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Qualified according to JEDEC1) for target applications CoolMOS CFD designed for: • Soft switching PWM Stages • LCD & CR | INFINEON 英飞凌 |   | |
SPA07N60CFD | Isc N-Channel MOSFET Transistor • FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching application | ISC 无锡固电 | | |
SPA07N60CFD | 500 V-950 V CoolMOS™ N 沟道功率 MOSFET | INFINEON 英飞凌 | | |
POWER FIELD EFFECT TRANSISTOR [Champion Microelectronic Corporation] GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanc | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient | HSMC 华昕 | | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient | HSMC 华昕 | | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient | HSMC 华昕 | |
SPA07N60CFD产品属性
- 类型
描述
- 型号
SPA07N60CFD
- 功能描述
MOSFET COOL MOS PWR TRANS 650V 0.7 Ohms
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEO |
25+ |
TO-220 |
400 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
INFINEON/英飞凌 |
2025+ |
TO-220F |
5000 |
原装进口,免费送样品! |
|||
SLKOR |
ROHS+Original |
NA |
6548 |
专业电子元器件供应链/QQ 350053121 /正纳电子 |
|||
INFINEON |
24+ |
TO-220属封 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INFINEON/英飞凌 |
24+ |
PG-TO220-3 |
60000 |
||||
INFINEON/英飞凌 |
24+ |
TO-220F |
21574 |
郑重承诺只做原装进口现货 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
INFINEON/英飞凌 |
22+ |
TO-220 |
20000 |
公司只有原装 品质保障 |
|||
INFINEON |
24+ |
n/a |
25836 |
新到现货,只做原装进口 |
|||
INFINEON |
20+ |
TO-220F |
38900 |
原装优势主营型号-可开原型号增税票 |
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特点 •新的革命高电压技术 •内在的快速恢复体二极管 •极低的反向恢复电荷 •超低栅极电荷 •至尊的dv/ dt的额定 •高峰值电流能力 •定期雪崩额定 •合格的为工业级应用根据JEDEC0） •无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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