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H07N60F中文资料

厂家型号

H07N60F

文件大小

61.51Kbytes

页面数量

5

功能描述

N-Channel Power Field Effect Transistor

数据手册

下载地址一下载地址二

生产厂商

HSMC

H07N60F数据手册规格书PDF详情

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.

Features

• Robust High Voltage Termination

• Avalanc he Energy Specified

• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSS and VDS(on) Specified at Elevated Temperature

H07N60F产品属性

  • 类型

    描述

  • 型号

    H07N60F

  • 制造商

    HSMC

  • 制造商全称

    HSMC

  • 功能描述

    N-Channel Power Field Effect Transistor

更新时间:2025-10-9 11:10:00
供应商 型号 品牌 批号 封装 库存 备注 价格
HSMC
23+
28957
原厂授权一级代理,专业海外优势订货,价格优势、品种
华昕
24+
TO-220F
5000
只做原装公司现货
JD/晶导
23+
SMAF
69820
终端可以免费供样,支持BOM配单!
H
25+
TO-TO-220F
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
H
TO-220
22+
6000
十年配单,只做原装
TOSHIBA
17+
SOT-183
6200
100%原装正品现货
NS
97+
MSOP8
1335
全新原装进口自己库存优势
TOSHIBA
16+
SOT-183
10000
进口原装现货/价格优势!
ADI
2006
5/SOT23
133
自己公司全新库存绝对有货
TOS
24+
MSOP-8
110