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位置：首页 > IC中文资料 > H07N60

型号 功能描述 生产厂家 企业 LOGO 操作
H07N60

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient

HSMC

华昕

H07N60

N-Channel Power Field Effect Transistor

HSMC

华昕

H07N60E

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient

HSMC

华昕

H07N60F

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient

HSMC

华昕

H07N60F

High Voltage MOSFET

HSMC

华昕

CMT07N60

POWER FIELD EFFECT TRANSISTOR

[Champion Microelectronic Corporation] GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanc

ETCList of Unclassifed Manufacturers

未分类制造商

SPA07N60CFD

CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode

Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Qualified according to JEDEC1) for target applications CoolMOS CFD designed for: • Soft switching PWM Stages • LCD & CR

INFINEON

英飞凌

H07N60产品属性

  • 类型

    描述

  • Channel：

    N

  • VDSS(V)：

    600

  • ID(A)：

    7

  • VGS(V)：

    ±30

  • RDS(on)Max.(ohm)：

    1.2

  • RDS(on)@VGS(V)：

    10

  • RDS(on)@ID(A)：

    3.5

  • RoHS(Note1)：

    PF

  • Status(Note2)：

    M

H07N60供应商更多...

更新时间：2026-8-4 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市安富世纪电子有限公司
H07N60E
HSMC
23+
17+
6500
专注配单,只做原装进口现货
询价
深圳市宏捷佳电子科技有限公司
H07N60E
H
25+
TO-
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
深圳市威尔健半导体有限公司
H07N60E
華晰
23+
TO0-220
50000
全新原装正品现货,支持订货
询价
深圳市鹏和科技有限公司
H07N60F
华昕
24+
TO-220F
5000
只做原装公司现货
询价
深圳博中泰实业有限公司
H07N60E
華晰
25+
TO0-220
15000
本公司 只做全新原装正品
询价

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