Low Capacitance ESD Protection Array

Description The SP3001 has ultra low capacitance rail-to rail diodes with an additional zener diode fabricated in a proprietary silicon avalanche technology to protect each I/O pin providing a high level of protection for electronic equipment that may experience destructive electrostatic discha

Low Capacitance ESD Protection Array

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低电容ESD保护

SP3001采用专有的硅雪崩技术，将超低电容轨到轨二极管与附加的齐纳二极管组合在一起，用于保护输入/输出引脚，并为可能经历破坏性静电放电 （ESD）的电子设备提供高层次保护。 这些功能强大的二极管可以在IEC61000-4-2国际标准规定的最高级别（4级，8KV接触放电）安全地吸收反复性ESD放电，且性能不会下降。 其非常低的负载电容也使得它们成为保护HDMI、DVI、USB2.0和IEEE 1394等高速信号引脚的理想之选。 :• 低电容：每次输入/输出的电容为0.65pF (TYP) \n• 为±8kV接触放电提供ESD保护(IEC61000-4-2) \n• 5V下的（最大）低泄漏电流为0.5μA \n• SC70封装体积小巧，节省电路板空间\n应用:• 计算机外围设备 \n• 手机 \n• PDA \n• 数码相机 \n• 网络硬件/端口 \n• 测试设备 \n• 医疗设备\n 查看库存预订样品•电气特性\n•技术资源\n•环保信息;

Low Capacitance ESD Protection Array

文件：385.93 Kbytes Page：6 Pages

Low Capacitance ESD Protection Array

文件：385.93 Kbytes Page：6 Pages

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR）剪切带（CT） 描述：TVS DIODE 6VWM 13VC SC70-6 电路保护 TVS - 二极管

10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5

Light Emitting Diode Miniature, Diffused Red

Description: The NTE3001 is a diffused Gallium Arsenide Phosphide diode mounted in a two lead epoxy package with a red diffused lens. On forward bias, this device emits a spectrally narrow band of visible light which peaks at 660nm. The NTE3001 is intended for high volume indicator light app

SDH/SONET STM4/OC12 laser drivers

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