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SMZ180

Surface mount Silicon-Zener Diodes (non-planar technology)

Surface mount Silicon-Zener Diodes (non-planar technology) • Maximum power dissipation 2 W • Nominal Z-voltage 1…200 V • Plastic case MELF DO-213AB • Weight approx. 0.12 g • Plastic material has UL classifi

DIOTEC

德欧泰克

SMZ180

SURFACE MOUNT SILICON ZENER DIODES

Features ● High peak reverse power dissipation ● Complete Voltage Range 3.6 to 200 Volts ● Low leakage current ● High reliability

SUNMATE

森美特

SMZ180

Surface mount Silicon-Zener Diodes

VZ : 1 - 200 Volts PD : 2 Watts Features ◇ Complete Voltage Range 1 to 200 Volts ◇ High peak reverse power dissipation ◇ High reliability ◇ Low leakage current ◇ Pb / RoHS Free

LUGUANG

鲁光电子

SMZ180

2W 180V Zener diode

文件:429.698 Kbytes Page:2 Pages

SUNMATE

森美特

PDF上传者:深圳冠荣电子有限公司

SMZ180

Zener silicon diodes

文件:54.29 Kbytes Page:3 Pages

SEMIKRON

赛米控丹佛斯

SMZ180

Surface Mount Silicon-Zener Diodes (non-planar technology)

文件:106.44 Kbytes Page:2 Pages

DIOTEC

德欧泰克

SMZ180

Surface Mount Silicon-Zener Diodes (non-planar technology)

文件:158.39 Kbytes Page:3 Pages

DIOTEC

德欧泰克

SMZ180

SMD Zener Diodes

文件:187.98 Kbytes Page:3 Pages

DIOTEC

德欧泰克

Surface Mount Silicon-Zener Diodes

Surface Mount Silicon-Zener Diodes (non-planar technology) • Maximum power dissipation 2 W • Nominal Z-voltage 10...200 V • Plastic case MELF DO-213AB • Weight approx. 0.12 g • Plastic material has UL classific

DIOTEC

德欧泰克

Zener Diodes

DIOTEC

德欧泰克

Plastic Medium Power Silicon PNP Transistor

Plastic Medium Power Silicon PNP Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD180 is complementary with BD179

MOTOROLA

摩托罗拉

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

MOSPEC

统懋

Silicon Power Transistor High Power Audio Amplifier

Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: • High DC Current Gain: hFE = 25 – 100 @ IC = 7.5A • Excellent

NTE

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

NEC

瑞萨

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

NEC

瑞萨

SMZ180产品属性

  • 类型

    描述

  • Package:

    DO-213AB/Melf

  • Vzmin:

    176.00 V

  • Vznom:

    180.00 V

  • Vzmax:

    184.00 V

  • Iztest:

    5.00 mA

  • Ptot:

    2.000 W

  • Tjmax:

    150 °C

  • IR:

    1.000 µA

  • rzj:

    120.0 Ω

  • Cj:

    pF

  • VR:

    V

更新时间:2026-5-21 11:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
26+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择

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