Hyperabrupt Junction Tuning Varactors

Description The SMV1702 devices are silicon hyperabrupt junction varactor diodes specifically designed for battery operation. The specified high capacitance ratio and low RS of these varactors make them appropriate for low noise VCOs used at frequencies in wireless systems. Applications include l

Hyperabrupt Junction Tuning Varactors

Description The SMV1705 group of silicon hyperabrupt junction varactor diodes is specifically designed for battery operation. The specified high capacitance ratio and low reverse voltage of these varactors make them appropriate for low-noise voltage controlled oscillators (VCOs) used at frequenci

Hyperabrupt Junction Tuning Varactors

The SMV1705 group of silicon hyperabrupt junction varactor diodes is specifically designed for battery operation. The specified high capacitance ratio and low reverse voltage of these varactors make them appropriate for low-noise Voltage Controlled Oscillators (VCOs) used at frequencies in wireless • Low series resistance\n• High capacitance ratio\n• Packages rated MSL1, 260 °C per JEDEC J-STD-020;

Hyperabrupt Tuning Varactors Supplied on Film Frame and Waffle Packs

Skyworks SMV1705 varactors are silicon hyperabrupt junctionvaractor diodes specifically designed for battery operation. Thesedevices have a high capacitance ratio and low series resistance,which makes them appropriate for low phase noise VoltageControlled Oscillators (VCOs) operating at wireless fre • Designed for high volume, low-cost battery applications\n• Low series resistance\n• High capacitance ratio\n• Available as:− Full wafer on film frame (SMV1705-099)− Dice in waffle packs (SMV1705-000)\n• Small footprint chip size: 12 x 12 x 5.5 mils;

Hyperabrupt Junction Tuning Varactors

Description The SMV1705 group of silicon hyperabrupt junction varactor diodes is specifically designed for battery operation. The specified high capacitance ratio and low reverse voltage of these varactors make them appropriate for low-noise voltage controlled oscillators (VCOs) used at frequenci

Hyperabrupt Junction Tuning Varactor

Description The SMV1705-079 is a silicon hyperabrupt junction varactor diode specifically designed for battery operation.The specified high capacitance ratio and low RS of this varactor make it appropriate for low noise VCOs used at frequencies in wireless systems to beyond 2.5 GHz.Applications i

Hyperabrupt Junction Tuning Varactors

Description The SMV1705 group of silicon hyperabrupt junction varactor diodes is specifically designed for battery operation. The specified high capacitance ratio and low reverse voltage of these varactors make them appropriate for low-noise voltage controlled oscillators (VCOs) used at frequenci

Hyperabrupt Junction Tuning Varactors

Description The SMV1705 group of silicon hyperabrupt junction varactor diodes is specifically designed for battery operation. The specified high capacitance ratio and low reverse voltage of these varactors make them appropriate for low-noise voltage controlled oscillators (VCOs) used at frequenci

Hyperabrupt Junction Tuning Varactors

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Hyperabrupt Junction Tuning Varactors

文件：704.15 Kbytes Page：8 Pages

变容二极管 Tuning Varactors

Hyperabrupt Junction Tuning Varactors

文件：704.15 Kbytes Page：8 Pages

Hyperabrupt Junction Tuning Varactors

文件：704.15 Kbytes Page：8 Pages

Hyperabrupt Junction Tuning Varactors

文件：704.15 Kbytes Page：8 Pages

封装/外壳：SOD-882 包装：卷带（TR） 描述：DIODE VARACTOR 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

封装/外壳：SC-79，SOD-523 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE VARACTOR 12V 20MA SC79 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

Hyperabrupt Junction Tuning Varactors

文件：704.15 Kbytes Page：8 Pages

TMOS FET Switching(N-Channel-Enhancement)

TMOS FET Switching N–Channel — Enhancement

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly