Hyperabrupt Junction Tuning Varactors

Description The SMV1705 group of silicon hyperabrupt junction varactor diodes is specifically designed for battery operation. The specified high capacitance ratio and low reverse voltage of these varactors make them appropriate for low-noise voltage controlled oscillators (VCOs) used at frequenci

Hyperabrupt Junction Tuning Varactors

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Hyperabrupt Tuning Varactors Supplied on Film Frame and Waffle Packs

Skyworks SMV1705 varactors are silicon hyperabrupt junctionvaractor diodes specifically designed for battery operation. Thesedevices have a high capacitance ratio and low series resistance,which makes them appropriate for low phase noise VoltageControlled Oscillators (VCOs) operating at wireless fre • Designed for high volume, low-cost battery applications\n• Low series resistance\n• High capacitance ratio\n• Available as:− Full wafer on film frame (SMV1705-099)− Dice in waffle packs (SMV1705-000)\n• Small footprint chip size: 12 x 12 x 5.5 mils;

Hyperabrupt Junction Tuning Varactors

Description The SMV1705 group of silicon hyperabrupt junction varactor diodes is specifically designed for battery operation. The specified high capacitance ratio and low reverse voltage of these varactors make them appropriate for low-noise voltage controlled oscillators (VCOs) used at frequenci

Hyperabrupt Junction Tuning Varactors

Description The SMV1705 group of silicon hyperabrupt junction varactor diodes is specifically designed for battery operation. The specified high capacitance ratio and low reverse voltage of these varactors make them appropriate for low-noise voltage controlled oscillators (VCOs) used at frequenci

Hyperabrupt Junction Tuning Varactor

Description The SMV1705-079 is a silicon hyperabrupt junction varactor diode specifically designed for battery operation.The specified high capacitance ratio and low RS of this varactor make it appropriate for low noise VCOs used at frequencies in wireless systems to beyond 2.5 GHz.Applications i

Hyperabrupt Junction Tuning Varactors

Description The SMV1705 group of silicon hyperabrupt junction varactor diodes is specifically designed for battery operation. The specified high capacitance ratio and low reverse voltage of these varactors make them appropriate for low-noise voltage controlled oscillators (VCOs) used at frequenci

Hyperabrupt Junction Tuning Varactors

文件：704.15 Kbytes Page：8 Pages

变容二极管 Tuning Varactors

Hyperabrupt Junction Tuning Varactors

文件：704.15 Kbytes Page：8 Pages

Hyperabrupt Junction Tuning Varactors

文件：704.15 Kbytes Page：8 Pages

变容二极管 Ls=1.4nH SOT-23 Common Cathode

封装/外壳：SOD-882 包装：卷带（TR） 描述：DIODE VARACTOR 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

Hyperabrupt Junction Tuning Varactors

文件：704.15 Kbytes Page：8 Pages

封装/外壳：SC-79，SOD-523 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE VARACTOR 12V 20MA SC79 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

Hyperabrupt Junction Tuning Varactors

文件：704.15 Kbytes Page：8 Pages

Integrated Circuit VCR Hall Switch

Description: This device operates with a small permanent magnet and provides switching operation by increasing or decreasing the magnetic flux density. The device features operation on alternate magnetic field and a wide range of operating temperature.

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers. FEATURES • Super low on-state resistance RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID =

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers. FEATURES • Super low on-state resistance RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID =

1.5/1.9GHz BAND FRONT-END GaAs MMIC

文件：564.26 Kbytes Page：26 Pages

High Speed Power Driver

文件：298.57 Kbytes Page：11 Pages