Silicon Abrupt Tuning Varactor Diodes

Description The SMV14xx Series tuning varactors are silicon abrupt junction devices. They are designed for RF and Microwave applications in VCO’s, tunable filters, and matching networks. Available in a wide range of capacitance ratio values. Features • High Capacitance Ratios • Linear Tuning B

SILICON HYPERABRUPT TUNING DIODES

SILICON HYPERABRUPT TUNING DIODES ·High capacitance ratios ·Linear tuning between 2 and 8 volts ·Available over a broad range junction capacitances ·Satisfies a large number of broadband applications thru the VHF frequency band

Silicon Abrupt Tuning Varactors

·High Capacitance Ratios\n·Available Over a Broad Range of Junction Capacitances\n·Linear Tuning Between 2 and 8 Volts\n·Satisfies a Large Number ofWideband Applications through the VHF Frequency Band;

Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp

Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

AC/DC Voltage Level Meter

Features and Functions • The LB1407 and LB1417 are based on dB scale and linear scale respectively. • The input level is indicated in the form of a bar by means of 7 red/green LEDs. • The LED current is made variable with an external resistor. • An input amplifier is built in. • A wide range

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state-of-the-art diffused emitter ballasting for improved ruggedness and reliability. ■ 30 MHz ■ 28 VOLTS ■ IMD −30 dB ■ COMMON EMITTER ■ GOLD METALLIZATIO

Low-Power, 16-Bit Multichannel DAS with Internal Reference,10-Bit DACs, and RTC

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