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SMBT晶体管资料
SMBT2222别名：SMBT2222三极管、SMBT2222晶体管、SMBT2222晶体三极管
SMBT2222生产厂家：德国西门子AG公司
SMBT2222制作材料：
SMBT2222性质：射频/高频放大 （HF）_通用 （G）
SMBT2222封装形式：
SMBT2222极限工作电压：60V
SMBT2222最大电流允许值：0.6A
SMBT2222最大工作频率：<1MHZ或未知
SMBT2222引脚数：
SMBT2222最大耗散功率：0.33W
SMBT2222放大倍数：
SMBT2222图片代号：NO
SMBT2222vtest：60
SMBT2222htest：999900
- SMBT2222atest：.6
SMBT2222wtest：.33
SMBT2222代换 SMBT2222用什么型号代替：
SMBT价格
参考价格：￥0.1533
型号：SMBT1232LT1G 品牌：ON Semiconductor 备注：这里有SMBT多少钱，2024年最近7天走势，今日出价，今日竞价，SMBT批发/采购报价，SMBT行情走势销售排行榜，SMBT报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
COAXIAL CONNECTORS SMBseriescoaxialconnectorsaresmallsize,push-oncouplingtype,basisofthegeneralpurposestandards（IEC60169-10）.Forpaneltocableorboardtocableapplication,achievinghighfrequencysignaltransmissionandhighdensitypackaginginsideequipment.Applicablefrequencies:fromDCup | JAEJapan Aviation Electronics Industry, Ltd. 航空电子日本航空电子工业株式会社 |  |   | |
COAXIAL CONNECTORS SMBseriescoaxialconnectorsaresmallsize,push-oncouplingtype,basisofthegeneralpurposestandards（IEC60169-10）.Forpaneltocableorboardtocableapplication,achievinghighfrequencysignaltransmissionandhighdensitypackaginginsideequipment.Applicablefrequencies:fromDCup | JAEJapan Aviation Electronics Industry, Ltd. 航空电子日本航空电子工业株式会社 | | | |
NPN Silicon Switching Transistors NPNSiliconSwitchingTransistors ●HighDCcurrentgain:0.1mAto500mA ●Lowcollector-emittersaturationvoltage ●Complementarytypes:SMBT2907,SMBT2907A(PNP) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 |  | | |
NPN Silicon Switching Transistors NPNSiliconSwitchingTransistors ●HighDCcurrentgain:0.1mAto500mA ●Lowcollector-emittersaturationvoltage ●Complementarytypes:SMBT2907,SMBT2907A(PNP) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
NPN Silicon Switching Transistor NPNSiliconSwitchingTransistor •Lowcollector-emittersaturationvoltage •Complementarytype: SMBT2907A/MMBT2907A(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
Low collector-emitter saturation voltage NPNSiliconSwitchingTransistor •Lowcollector-emittersaturationvoltage •Complementarytype: SMBT2907A/MMBT2907A(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Low collector-emitter saturation voltage NPNSiliconSwitchingTransistor •Lowcollector-emittersaturationvoltage •Complementarytype: SMBT2907A/MMBT2907A(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP Silicon Switching Transistors PNPSiliconSwitchingTransistors ●HighDCcurrentgain:0.1mAto500mA ●Lowcollector-emittersaturationvoltage ●Complementarytypes:SMBT2222,SMBT2222A(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
PNP Silicon Switching Transistors PNPSiliconSwitchingTransistors ●HighDCcurrentgain:0.1mAto500mA ●Lowcollector-emittersaturationvoltage ●Complementarytypes:SMBT2222,SMBT2222A(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
PNP Silicon Switching Transistor PNPSiliconSwitchingTransistor ●HighDCcurrentgain:0.1mAto500mA ●Lowcollector-emittersaturationvoltage ●Complementarytype:SMBT2222A/MMBT2222A(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP Silicon Switching Transistor PNPSiliconSwitchingTransistors ●HighDCcurrentgain:0.1mAto500mA ●Lowcollector-emittersaturationvoltage ●Complementarytypes:SMBT2222,SMBT2222A(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
High Current Surface Mount PNP Silicon HighCurrentSurfaceMountPNPSiliconSwitchingTransistorforLoadManagementinPortableApplications Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements •TheseDevicesarePb−Free,Haloge | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
NPN Silicon Switching Transistor NPNSiliconSwitchingTransistors •HighDCcurrentgain:0.1mAto100mA •Lowcollector-emittersaturationvoltage •ForSMBT3904S: Two(galvanic)internalisolatedtransistors withgoodmatchinginonepackage •Complementarytypes:SMBT3906...MMBT3906 •SMBT3904S:Fororientat | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Dual General Purpose Transistors TheMBT3904DW1andMBT3904DW2devicesareaspin−offofourpopularSOT−23/SOT−323three−leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT−363six−leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisidealfor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Dual General Purpose Transistors TheMBT3904DW1andMBT3904DW2devicesareaspin−offofourpopularSOT−23/SOT−323three−leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT−363six−leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisidealfor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Dual General Purpose Transistors TheMBT3904DW1andMBT3904DW2devicesareaspin−offofourpopularSOT−23/SOT−323three−leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT−363six−leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisidealfor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
NPN/PNP Silicon Switching Transistor Array NPN/PNPSiliconSwitchingTransistorArray •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedNPN/PNPtransistorinonepackage •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon Switching Transistor Array NPNSiliconSwitchingTransistorArray •HighDCcurrentgain:0.1mAto100mA •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedTransistors withhighmatchinginonepackage •Complementarytype:SMBT3906S(PNP) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
NPN Silicon Switching Transistor Array NPNSiliconSwitchingTransistors •HighDCcurrentgain:0.1mAto100mA •Lowcollector-emittersaturationvoltage •ForSMBT3904S: Two(galvanic)internalisolatedtransistors withgoodmatchinginonepackage •Complementarytypes:SMBT3906...MMBT3906 •SMBT3904S:Fororientat | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon Switching Transistor Array NPNSiliconSwitchingTransistors •HighDCcurrentgain:0.1mAto100mA •Lowcollector-emittersaturationvoltage •ForSMBT3904S/SMBT3904U:Two(galvanic)internalisolatedtransistorswithgoodmatchinginonepackage •Complementarytypes:SMBT3906...MMBT3906 •SMBT3904S/U:Foror | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN/PNP Silicon Switching Transistor Array NPN/PNPSiliconSwitchingTransistorArray •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedNPN/PNPtransistorinonepackage •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP Silicon Switching Transistor PNPSiliconSwitchingTransistors •HighDCcurrentgain:0.1mAto100mA •Lowcollector-emittersaturationvoltage •ForSMBT3906SandSMBT3906U: Two(galvanic)internalisolatedtransistor withgoodmatchinginonepackage •Complementarytypes: SMBT3904...MMBT3904(NPN) •SMB | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP Silicon Switching Transistor Array PNPSiliconSwitchingTransistorArray •HighDCcurrentgain:0.1mAto100mA •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedTransistors withhighmatchinginonepackage •Complementarytype:SMBT3904S(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
PNP Silicon Switching Transistor Array PNPSiliconSwitchingTransistors •HighDCcurrentgain:0.1mAto100mA •Lowcollector-emittersaturationvoltage •ForSMBT3906SandSMBT3906U: Two(galvanic)internalisolatedtransistor withgoodmatchinginonepackage •Complementarytypes: SMBT3904...MMBT3904(NPN) •SMB | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP Silicon Switching Transistor Array PNPSiliconSwitchingTransistors •HighDCcurrentgain:0.1mAto100mA •Lowcollector-emittersaturationvoltage •ForSMBT3906SandSMBT3906U: Two(galvanic)internalisolatedtransistor withgoodmatchinginonepackage •Complementarytypes: SMBT3904...MMBT3904(NPN) •SMB | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP Silicon Switching Transistor PNPSiliconSwitchingTransistor ●Highcurrentgain:0.1mAto100mA ●Lowcollector-emittersaturationvoltage | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
PNP Silicon Transistors PNPSiliconTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
PNP Silicon Transistors PNPSiliconTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
PNP Silicon Transistor PNPSiliconTransistor •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon Darlington Transistor NPNSiliconDarlingtonTransistor ●Forgeneralamplifierapplications ●Highcollectorcurrent ●Highcurrentgain | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
NPN Silicon Transistors NPNSiliconTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
NPN Silicon Transistors NPNSiliconTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
400W, 600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features •400,600WPeakPulsePowerDissipation •70VStandoffVoltage •100VMaximumClampingVoltage-Arequirementofmany- 48VBackplaneTelecomApplications •GlassPassivatedDieConstruction •FastResponseTime:Typicallylessthan1ps •LeadFreeFinish,RoHSCompliant(Not | DIODESDiodes Incorporated 达尔科技 |  | | |
400W, 600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features •400,600WPeakPulsePowerDissipation •70VStandoffVoltage •100VMaximumClampingVoltage-Arequirementofmany- 48VBackplaneTelecomApplications •GlassPassivatedDieConstruction •FastResponseTime:Typicallylessthan1ps •LeadFreeFinish,RoHSCompliant(Note4 | DIODESDiodes Incorporated 达尔科技 | | | |
400W, 600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features •400,600WPeakPulsePowerDissipation •70VStandoffVoltage •100VMaximumClampingVoltage-Arequirementofmany- 48VBackplaneTelecomApplications •GlassPassivatedDieConstruction •FastResponseTime:Typicallylessthan1ps •LeadFreeFinish,RoHSCompliant(Not | DIODESDiodes Incorporated 达尔科技 | | | |
400W, 600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features •400,600WPeakPulsePowerDissipation •70VStandoffVoltage •100VMaximumClampingVoltage-Arequirementofmany- 48VBackplaneTelecomApplications •GlassPassivatedDieConstruction •FastResponseTime:Typicallylessthan1ps •LeadFreeFinish,RoHSCompliant(Note4 | DIODESDiodes Incorporated 达尔科技 | | | |
NPN Silicon AF Transistors ●Highbreakdownvoltage ●Lowcollector-emittersaturationvoltage ●Complementarytypes:SMBTA55 SMBTA56(PNP) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
NPN Silicon AF Transistors ●Highbreakdownvoltage ●Lowcollector-emittersaturationvoltage ●Complementarytypes:SMBTA55 SMBTA56(PNP) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
NPN Silicon AF Transistor NPNSiliconAFTransistor •Lowcollector-emittersaturationvoltage •Complementarytype: SMBTA56/MMBTA56(PNP) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon AF Transistor •Highbreakdownvoltage •Lowcollector-emittersaturationvoltage •Complementarytype:SMBTA56M(PNP) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
NPN Silicon AF Transistor Array NPNSiliconAFTransistorArray •Highbreakdownvoltage •Lowcollector-emittersaturationvoltage •Complementarytype:SMBTA56U(PNP) •Two(galvanic)internalisolatedTransistorswithgoodmatchinginonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN/PNP Silicon AF Transistor Array NPN/PNPSiliconAFTransistorArray •Highbreakdownvoltage •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedNPN/PNPTransistorinonepackage •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon Darlington Transistors NPNSiliconDarlingtonTransistors ●HighDCcurrentgain ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon Darlington Transistors NPNSiliconDarlingtonTransistors ●HighDCcurrentgain ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon Transistors for High Voltages NPNSiliconTransistorsforHighVoltages ●Highbreakdownvoltage ●Lowcollector-emittersaturationvoltage ●Complementarytypes:SMBTA92,SMBTA93(PNP) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
NPN Silicon Transistor for High Voltages NPNSiliconHigh-VoltageTransistors •Lowcollector-emittersaturationvoltage •Complementarytypes:SMBTA92/MMBTA92(PNP) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon High-Voltage Transistor NPNSiliconHigh-VoltageTransistor •Highbreakdownvoltage •Lowcollector-emittersaturationvoltage •Complementarytype:SMBTA92M(PNP) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
NPN Silicon High-Voltage Transistor NPNSiliconHigh-VoltageTransistor ●Highbreakdownvoltage ●Lowcollector-emittersaturationvoltage ●Complementarytype:SMBTA92M(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon Transistors for High Voltages NPNSiliconTransistorsforHighVoltages ●Highbreakdownvoltage ●Lowcollector-emittersaturationvoltage ●Complementarytypes:SMBTA92,SMBTA93(PNP) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
PNP Silicon AF Transistors PNPSiliconAFTransistors ●Highbreakdownvoltage ●Lowcollector-emittersaturationvoltage ●Complementarytypes:SMBTA05,SMBTA06(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
PNP Silicon AF Transistors PNPSiliconAFTransistors ●Highbreakdownvoltage ●Lowcollector-emittersaturationvoltage ●Complementarytypes:SMBTA05,SMBTA06(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
PNP Silicon AF Transistor PNPSiliconAFTransistor •Highbreakdownvoltage •Lowcollector-emittersaturationvoltage •Complementarytype:SMBTA06M(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
PNP Silicon AF Transistor PNPSiliconAFTransistor ●Highbreakdownvoltage ●Lowcollector-emittersaturationvoltage ●Complementarytype:SMBTA06M(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP Silicon Darlington Transistors PNPSiliconDarlingtonTransistors ●Highcollectorcurrent ●HighDCcurrentgain | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
PNP Silicon Darlington Transistors PNPSiliconDarlingtonTransistors ●Highcollectorcurrent ●HighDCcurrentgain | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP Silicon Darlington Transistors PNPSiliconDarlingtonTransistors ●Highcollectorcurrent ●HighDCcurrentgain | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
PNP Silicon Darlington Transistors PNPSiliconDarlingtonTransistors ●Highcollectorcurrent ●HighDCcurrentgain | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP Silicon Transistor PNPSiliconTransistor ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
PNP Silicon Transistors for High Voltages PNPSiliconTransistorsforHighVoltages ●Highbreakdownvoltage ●Lowcollector-emittersaturationvoltage ●Complementarytypes:SMBTA42,SMBTA43(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
PNP Silicon High Voltage Transistor PNPSiliconHigh-VoltageTransistors •SuitableforvideooutputstagesinTVsets andswitchingpowersupplies •Highbreakdownvoltage •Lowcollector-emittersaturationvoltage •Complementarytypes: SMBTA92/MMBT92(NPN) •Pb-free(RoHScompliant)package1) •Qualified | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
SMBT产品属性
- 类型
描述
- 型号
SMBT
- 制造商
Infineon Technologies
- 功能描述
Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||||
MOTOROLA/摩托罗拉 |
2022 |
SOT-23 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
ON-安森美 |
24+25+/26+27+ |
车规-稳压IC |
236148 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
MOTOROLA |
22+ |
SMD |
2978 |
100%全新原装公司现货供应!随时可发货 |
|||
ON/安森美 |
22+ |
SOT23 |
6521 |
只做原装正品现货!或订货假一赔十! |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
MOTOROLA |
22+ |
SOT-23 |
28600 |
只做原装正品现货假一赔十一级代理 |
|||
MOTOROLA |
98+ |
SOT-23 |
9000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
23+ |
NA |
150000 |
电子元器件供应原装现货. 优质独立分销。原厂核心渠道 |
|||
3000 |
自己现货 |
SMBT芯片相关品牌
SMBT规格书下载地址
SMBT参数引脚图相关
- t40
- t2222
- t2010
- t100k
- sw-262
- stm32f103
- stm32
- stk
- stc89c52rc
- stc12c5a60s2
- st70
- st18
- sst25vf040
- sr2m
- spwm
- spice模型
- spd
- sp3232
- soc
- smd
- SMC08
- SMC05
- SMBYW02
- SMBYT03
- SMBYT01
- SMBTA93
- SMBTA92
- SMBTA70
- SMBTA64
- SMBTA63
- SMBTA56
- SMBTA55
- SMBTA43
- SMBTA42
- SMBTA20
- SMBTA14
- SMBTA13
- SMBTA06
- SMBTA05
- SMBT70A
- SMBT3907
- SMBT3906
- SMBT3904PN
- SMBT3904
- SMBT2907A
- SMBT2907
- SMBT2222A
- SMBT2222
- SMBR240
- SMBQ60
- SMBPPLK
- SMBPPKB
- SMBPPK6
- SMBPPK3
- SMBPPK
- SMBPD
- SM-BM-6
- SM-BM50
- SM-BM-3
- SMBLLGS
- SMBLLG
- SMBLD
- SMBLB
- SMBJXX
- SMBJ-Q
- SMBJ-HR
- SMBJ-E
- SMBJ90C
- SMA6512
- SMA6511
- SMA6040
- SMA6014
- SMA6012
- SMA6010
- SMA4033
- SMA4032
- SMA4031
- SMA4030
- SMA4021
- SMA4020
- SM8J41
- SM8G41
- SM8D41
- SM6G14
- SM6D14
- SM6B14
- SM3J41
- SM3D41
SMBT数据表相关新闻
SMCJ100A-13-F
SMCJ100A-13-F
2023-6-7SMBJ5.0A
优势渠道
2023-3-1SMC3K33CAHM3/57
SMC3K33CAHM3/57
2022-3-2SMCJ130CA，SMCJ13CA，SMCJ14CA-13
SMCJ130CA，SMCJ13CA，SMCJ14CA-13
2020-4-13SMBJ64A
SMBJ64A，全新原装当天发货或门市自取0755-82732291.
2020-3-10SMBJ30AH-E3/52
SMBJ30AH-E3/52，全新原装当天发货或门市自取0755-82732291.
2019-12-3
DdatasheetPDF页码索引
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