COAXIAL CONNECTORS

SMB series coaxial connectors are small size, push-on coupling type, basis of the general purpose standards（IEC60169-10） . For panel to cable or board to cable application, achieving high frequency signal transmission and high density packaging inside equipment. Applicable frequencies : from DC up

COAXIAL CONNECTORS

SMB series coaxial connectors are small size, push-on coupling type, basis of the general purpose standards（IEC60169-10） . For panel to cable or board to cable application, achieving high frequency signal transmission and high density packaging inside equipment. Applicable frequencies : from DC up

NPN Silicon Switching Transistors

NPN Silicon Switching Transistors ● High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A (PNP)

NPN Silicon Switching Transistors

NPN Silicon Switching Transistors ● High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A (PNP)

NPN Silicon Switching Transistor

NPN Silicon Switching Transistor • Low collector-emitter saturation voltage • Complementary type: SMBT2907A / MMBT2907A (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Low collector-emitter saturation voltage

NPN Silicon Switching Transistor • Low collector-emitter saturation voltage • Complementary type: SMBT2907A / MMBT2907A (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Low collector-emitter saturation voltage

NPN Silicon Switching Transistor • Low collector-emitter saturation voltage • Complementary type: SMBT2907A / MMBT2907A (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

PNP Silicon Switching Transistors

PNP Silicon Switching Transistors ● High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2222,SMBT 2222 A (NPN)

PNP Silicon Switching Transistors

PNP Silicon Switching Transistors ● High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2222,SMBT 2222 A (NPN)

PNP Silicon Switching Transistor

PNP Silicon Switching Transistor ● High DC current gain: 0.1mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary type: SMBT2222A/ MMBT2222A (NPN)

PNP Silicon Switching Transistor

PNP Silicon Switching Transistors ● High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2222,SMBT 2222 A (NPN)

High Current Surface Mount PNP Silicon

High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Haloge

NPN Silicon Switching Transistor

NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906... MMBT3906 • SMBT3904S: For orientat

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

NPN/PNP Silicon Switching Transistor Array

NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101

NPN Silicon Switching Transistor Array

NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package • Complementary type: SMBT 3906S (PNP)

NPN Silicon Switching Transistor Array

NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906... MMBT3906 • SMBT3904S: For orientat

NPN Silicon Switching Transistor Array

NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906... MMBT3906 • SMBT3904S / U: For or

NPN/PNP Silicon Switching Transistor Array

NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101

PNP Silicon Switching Transistor

PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package • Complementary types: SMBT3904...MMBT3904 (NPN) • SMB

PNP Silicon Switching Transistor Array

PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package • Complementary types: SMBT3904...MMBT3904 (NPN) • SMB

PNP Silicon Switching Transistor Array

PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)

PNP Silicon Switching Transistor Array

PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package • Complementary types: SMBT3904...MMBT3904 (NPN) • SMB

PNP Silicon Switching Transistor

PNP Silicon Switching Transistor ● High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage

PNP Silicon Transistors

PNP Silicon Transistors ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz

PNP Silicon Transistors

PNP Silicon Transistors ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz

PNP Silicon Transistor

PNP Silicon Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30Hz and 15kHz

NPN Silicon Darlington Transistor

NPN Silicon Darlington Transistor ● For general amplifier applications ● High collector current ● High current gain

NPN Silicon Transistors

NPN Silicon Transistors ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage

NPN Silicon Transistors

NPN Silicon Transistors ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage

400W, 600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Features • 400, 600W Peak Pulse Power Dissipation • 70V Standoff Voltage • 100V Maximum Clamping Voltage - A requirement of many - 48V Backplane Telecom Applications • Glass Passivated Die Construction • Fast Response Time: Typically less than 1 ps • Lead Free Finish, RoHS Compliant (Not

400W, 600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Features • 400, 600W Peak Pulse Power Dissipation • 70V Standoff Voltage • 100V Maximum Clamping Voltage - A requirement of many - 48V Backplane Telecom Applications • Glass Passivated Die Construction • Fast Response Time: Typically less than 1 ps • Lead Free Finish, RoHS Compliant (Note 4

400W, 600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Features • 400, 600W Peak Pulse Power Dissipation • 70V Standoff Voltage • 100V Maximum Clamping Voltage - A requirement of many - 48V Backplane Telecom Applications • Glass Passivated Die Construction • Fast Response Time: Typically less than 1 ps • Lead Free Finish, RoHS Compliant (Not

400W, 600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Features • 400, 600W Peak Pulse Power Dissipation • 70V Standoff Voltage • 100V Maximum Clamping Voltage - A requirement of many - 48V Backplane Telecom Applications • Glass Passivated Die Construction • Fast Response Time: Typically less than 1 ps • Lead Free Finish, RoHS Compliant (Note 4

NPN Silicon AF Transistors

● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: SMBTA 55 SMBTA 56 (PNP)

NPN Silicon AF Transistors

● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: SMBTA 55 SMBTA 56 (PNP)

NPN Silicon AF Transistor

NPN Silicon AF Transistor • Low collector-emitter saturation voltage • Complementary type: SMBTA 56 / MMBTA56 (PNP) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

NPN Silicon AF Transistor

• High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56M (PNP)

NPN Silicon AF Transistor Array

NPN Silicon AF Transistor Array • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA56U (PNP) • Two ( galvanic) internal isolated Transistors with good matching in one package

NPN/PNP Silicon AF Transistor Array

NPN / PNP Silicon AF Transistor Array • High breakdown voltage • Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN/PNP Transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101

NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors ● High DC current gain ● High collector current ● Low collector-emitter saturation voltage

NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors ● High DC current gain ● High collector current ● Low collector-emitter saturation voltage

NPN Silicon Transistors for High Voltages

NPN Silicon Transistors for High Voltages ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: SMBTA 92, SMBTA 93 (PNP)

NPN Silicon Transistor for High Voltages

NPN Silicon High-Voltage Transistors • Low collector-emitter saturation voltage • Complementary types: SMBTA92 / MMBTA92(PNP) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

NPN Silicon High-Voltage Transistor

NPN Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 92M (PNP)

NPN Silicon High-Voltage Transistor

NPN Silicon High-Voltage Transistor ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary type: SMBTA92M (PNP)

NPN Silicon Transistors for High Voltages

NPN Silicon Transistors for High Voltages ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: SMBTA 92, SMBTA 93 (PNP)

PNP Silicon AF Transistors

PNP Silicon AF Transistors ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: SMBTA 05, SMBTA 06 (NPN)

PNP Silicon AF Transistors

PNP Silicon AF Transistors ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: SMBTA 05, SMBTA 06 (NPN)

PNP Silicon AF Transistor

PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 06M (NPN)

PNP Silicon AF Transistor

PNP Silicon AF Transistor ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary type: SMBTA06M (NPN)

PNP Silicon Darlington Transistors

PNP Silicon Darlington Transistors ● High collector current ● High DC current gain

PNP Silicon Darlington Transistors

PNP Silicon Darlington Transistors ● High collector current ● High DC current gain

PNP Silicon Darlington Transistors

PNP Silicon Darlington Transistors ● High collector current ● High DC current gain

PNP Silicon Darlington Transistors

PNP Silicon Darlington Transistors ● High collector current ● High DC current gain

PNP Silicon Transistor

PNP Silicon Transistor ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage

PNP Silicon Transistors for High Voltages

PNP Silicon Transistors for High Voltages ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: SMBTA 42, SMBTA 43 (NPN)

PNP Silicon High Voltage Transistor

PNP Silicon High-Voltage Transistors • Suitable for video output stages in TV sets ​​​​​​​ and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA92 / MMBT92 (NPN) • Pb-free (RoHS compliant) package1) • Qualified