SURFACE MOUNT SILICON ZENER DIODES

Features ● Low leakage current ● High reliability ● High peak reverse power dissipation ● Complete Voltage Range 3.3 to 200 Volts

丝印代码：335B；SILICON ZENER DIODES

Features Low leakage current High reliability High peak reverse power dissipation Complete Voltage Range 3.3 to 200 Volts

丝印代码：335B；SILICON ZENER DIODES

Features Complete Voltage Range 3.3 to 200 Volts High peak reverse power dissipation High reliability Low leakage current Mechanical Data Case : SMB (DO-214AA) Molded plastic Epoxy : UL94V-O rate flame retardant Polarity : Color band denotes cathode end Mounting position : Any

SMBK Plastic-Encapsulate Diodes

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稳压二极管

2.5 V to 5.5 V, 500 uA, Parallel Interface Quad Voltage-Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5334/AD5335/AD5336/AD5344 are quad 8-, 10-, and 12-bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 500 µA at 3 V, and feature a power-down mode that further reduces the current to 80 nA. These devices incorporate an on-chip output buffer that can drive

3-Phase Bridge Rectifier

Description: The NTE5335 and NTE5338 3–Phase bridge rectifiers incorporate highly efficient thermal management to provide high surge capability, extended life, and reliable performance. Available in an industry standard screw–mount package, these devices provide 2500Vrms from all terminals to the

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan