P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The TP5335 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors

P-Channel Enhancement Mode MOSFET

TP5335 is a low threshold enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and High input impedance and high gain \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nFree from secondary breakdown;

P-Channel Enhancement-Mode Vertical DMOS FET

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P-Channel Enhancement-Mode Vertical DMOS FET

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P-Channel Enhancement-Mode Vertical DMOS FET

文件：396.7 Kbytes Page：3 Pages

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The TP5335 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The TP5335 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The TP5335 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

P-Channel Enhancement-Mode Vertical DMOS FET

文件：396.7 Kbytes Page：3 Pages

P-Channel Enhancement-Mode Vertical DMOS FET

文件：582.1 Kbytes Page：3 Pages

P-Channel Enhancement-Mode Vertical DMOS FET

文件：396.7 Kbytes Page：3 Pages

P-Channel Enhancement-Mode Vertical DMOS FETs

P-Channel Enhancement-Mode Vertical DMOS FET

文件：737.51 Kbytes Page：12 Pages

P-Channel Enhancement-Mode Vertical DMOS FET

文件：582.1 Kbytes Page：3 Pages

P-Channel Enhancement-Mode Vertical DMOS FET

文件：396.7 Kbytes Page：3 Pages

2.5 V to 5.5 V, 500 uA, Parallel Interface Quad Voltage-Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5334/AD5335/AD5336/AD5344 are quad 8-, 10-, and 12-bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 500 µA at 3 V, and feature a power-down mode that further reduces the current to 80 nA. These devices incorporate an on-chip output buffer that can drive

3-Phase Bridge Rectifier

Description: The NTE5335 and NTE5338 3–Phase bridge rectifiers incorporate highly efficient thermal management to provide high surge capability, extended life, and reliable performance. Available in an industry standard screw–mount package, these devices provide 2500Vrms from all terminals to the

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the