Silicon MMIC Wideband Amplifi er

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Wideband Amplifier

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MMIC Amplifi er, 5V, 19mA, 0.1 to 3.3GHz, MCPH6

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MMIC，射频放大器，5 V，19 mA，0.1 至 3.3 GHz

Wideband Amplifier

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封装/外壳：6-SMD，扁平引线 包装：托盘 描述：IC RF AMP GP 0HZ-2.2GHZ 6MCPH RF/IF，射频/中频和 RFID 射频放大器

MMIC Amplifi er, 5V, 19mA, 0.1 to 3.3GHz, MCPH6

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NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to FJV4103R

52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

Power MOSFET(Vdss=30V, Rds(on)=0.019ohm, Id=46A??

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15 WATT 48V TO 5V/12V/15V ISOLATED DC-DC CONVERTER

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15 WATT 48V TO 5V/12V/15V ISOLATED DC-DC CONVERTER

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