DC-3.5 GHz, 3Volt 50 Ohm LNA MMIC Amplifier

Product Description Stanford Microdevices’ SLN-286 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance from DC-3.5 GHz. Product Features • Patented,

DC-3.5 GHz, 3Volt 50 Ohm LNA MMIC Amplifier

DC-3.5 GHz, 3Volt 50 Ohm LNA MMIC Amplifier

Schottky Barrier Diode

FEATURES • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Applications where a very low forward voltage is required

GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz

General Description The HMC286 & HMC286E are low cost Low Noise Amplifi ers (LNA) for 2.3 to 2.5 GHz spread spectrum applications. The LNA provides 19 dB of gain and a 1.7 dB noise fi gure from a single positive +3V power supply that consumes only 8.5mA. The typical output 1 dB compression po

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)

SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ● High emitter-base voltage : VEBO=25V(Min) ● High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ● Low on resistance : Ron=1 (Typ.) (IB=5mA) ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)

SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ● High emitter-base voltage : VEBO=25V(Min) ● High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ● Low on resistance : Ron=1 (Typ.) (IB=5mA) ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of

DC-6000 MHZ CASCADABLE GAAS HBT MMIC AMPLIFIER

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