GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz

General Description The HMC286 & HMC286E are low cost Low Noise Amplifi ers (LNA) for 2.3 to 2.5 GHz spread spectrum applications. The LNA provides 19 dB of gain and a 1.7 dB noise fi gure from a single positive +3V power supply that consumes only 8.5mA. The typical output 1 dB compression po

GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz

General Description The HMC286 & HMC286E are low cost Low Noise Amplifi ers (LNA) for 2.3 to 2.5 GHz spread spectrum applications. The LNA provides 19 dB of gain and a 1.7 dB noise fi gure from a single positive +3V power supply that consumes only 8.5mA. The typical output 1 dB compression po

GaAs MMIC POWER AMPLIFIER 5.0 - 6.0 GHz

General Description\nThe HMC286 & HMC286E are low cost Low Noise Amplifi ers (LNA) for 2.3 to 2.5 GHz spread spectrum applications. The LNA provides 19 dB of gain and a 1.7 dB noise fi gure from a single positive +3V power supply that consumes only 8.5mA. The typical output 1 dB compression point is 2.4 GHz LNA\nNoise Figure: 1.7 dB\nGain: 19 dB\nSingle Supply: +3V\nNo External Components\nUltra Small SOT26 Package Typical Applications\nThe HMC286 / HMC286E is ideal for:\n• BlueTooth\n• Home RF\n• 802.11 WLAN Radios\n• PCMCIA Platforms;

GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz

文件：173.89 Kbytes Page：6 Pages

GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz

文件：173.89 Kbytes Page：6 Pages

GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz

文件：173.89 Kbytes Page：6 Pages

GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz

文件：173.89 Kbytes Page：6 Pages

GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz

General Description The HMC286 & HMC286E are low cost Low Noise Amplifi ers (LNA) for 2.3 to 2.5 GHz spread spectrum applications. The LNA provides 19 dB of gain and a 1.7 dB noise fi gure from a single positive +3V power supply that consumes only 8.5mA. The typical output 1 dB compression po

GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz

文件：173.89 Kbytes Page：6 Pages

GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz

文件：173.89 Kbytes Page：6 Pages

GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz

文件：173.89 Kbytes Page：6 Pages

封装/外壳：SOT-23-6 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC AMP WLAN 2.3GHZ-2.5GHZ SOT26 RF/IF，射频/中频和 RFID 射频放大器

Schottky Barrier Diode

FEATURES • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Applications where a very low forward voltage is required

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)

SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ● High emitter-base voltage : VEBO=25V(Min) ● High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ● Low on resistance : Ron=1 (Typ.) (IB=5mA) ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)

SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ● High emitter-base voltage : VEBO=25V(Min) ● High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ● Low on resistance : Ron=1 (Typ.) (IB=5mA) ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of

DC-6000 MHZ CASCADABLE GAAS HBT MMIC AMPLIFIER

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