Schottky Barrier Diode

FEATURES • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Applications where a very low forward voltage is required

Small Signal Schottky Diode

FEATURES • Integrated protection ring against static discharge • Very low forward voltage • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Applications where a very low forward voltage is required

Small Signal Schottky Diode

Integrated protection ring against static discharge\nVery low forward voltage;

Small Signal Schottky Diode

文件：185.67 Kbytes Page：5 Pages

Small Signal Schottky Diode

文件：174.49 Kbytes Page：4 Pages

Small Signal Schottky Diode

FEATURES • Integrated protection ring against static discharge • Very low forward voltage • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Applications where a very low forward voltage is required

Small Signal Schottky Diode

文件：185.67 Kbytes Page：5 Pages

Small Signal Schottky Diode

文件：174.49 Kbytes Page：4 Pages

Small Signal Schottky Diode

文件：94.87 Kbytes Page：5 Pages

Small Signal Schottky Diode

文件：94.87 Kbytes Page：5 Pages

Small Signal Schottky Diode

文件：185.67 Kbytes Page：5 Pages

封装/外壳：SOD-80 变式 包装：剪切带（CT）带盒（TB） 描述：DIODE SCHOTTKY 50V 200MA SOD80 分立半导体产品 二极管 - 整流器 - 单

Small Signal Schottky Diode

文件：94.87 Kbytes Page：5 Pages

Small Signal Schottky Diode

文件：185.67 Kbytes Page：5 Pages

封装/外壳：SOD-80 变式 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 50V 200MA SOD80 分立半导体产品 二极管 - 整流器 - 单

GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz

General Description The HMC286 & HMC286E are low cost Low Noise Amplifi ers (LNA) for 2.3 to 2.5 GHz spread spectrum applications. The LNA provides 19 dB of gain and a 1.7 dB noise fi gure from a single positive +3V power supply that consumes only 8.5mA. The typical output 1 dB compression po

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)

SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ● High emitter-base voltage : VEBO=25V(Min) ● High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ● Low on resistance : Ron=1 (Typ.) (IB=5mA) ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)

SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ● High emitter-base voltage : VEBO=25V(Min) ● High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ● Low on resistance : Ron=1 (Typ.) (IB=5mA) ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of

DC-6000 MHZ CASCADABLE GAAS HBT MMIC AMPLIFIER

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