高压 3 相直流无刷电机驱动器

SIM6812M产品具有如下特征：\n1）500V/2.5A的MOSFET用于构成三相全桥电路\n2）前置驱动IC具有UVLO（欠压保护）、OCP（过电流保护）、TSD（过热保护）、OCL（过电流限制）等保护功能\n3）将有限流电阻的自举二极管置于同一封装内\n4）采用DIP全塑封装，支持三相电流检测 内置限流电阻 (60Ω) 的 Boot 二极管、支持 CMOS（3.3V 和 5.0V）电平输入、内置欠压保护电路、过热保护动作电路 (TSD)、内置限流电路 (OCL)、DIP 封装;

High Voltage 3-Phase Motor Driver ICs

文件：553.17 Kbytes Page：16 Pages

500V / 600V High Voltage 3-phase Motor Driver ICs

文件：2.10187 Mbytes Page：52 Pages

500V / 600V High Voltage 3-phase Motor Driver ICs

文件：2.10187 Mbytes Page：52 Pages

封装/外壳：40-DIP（0.657"，16.70mm），29 引线 功能：驱动器 包装：管件 描述：IC BRIDGE DRIVER PAR 40DIP 集成电路（IC） 电机驱动器，控制器

DABiC-IV, 20-BIT SERIAL-INPUT, LATCHED SOURCE DRIVER

DABiC-IV, 32-BIT SERIAL-INPUT, LATCHED SOURCE DRIVER The A6818– devices combine a 32-bit CMOS shift register, accompanying data latches and control circuitry with bipolar sourcing outputs and pnp active pull downs. Designed primarily to drive vacuum fluorescent displays, the 60 V and -40 mA outpu

DABiC-IV, 20-BIT SERIAL-INPUT, LATCHED SOURCE DRIVER

DABiC-IV, 32-BIT SERIAL-INPUT, LATCHED SOURCE DRIVER The A6818– devices combine a 32-bit CMOS shift register, accompanying data latches and control circuitry with bipolar sourcing outputs and pnp active pull downs. Designed primarily to drive vacuum fluorescent displays, the 60 V and -40 mA outpu

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

NPN Triple Diffused Planar Silicon Transistor

1. High Collector-Base Breakdown Voltage : BVCBO= 1500V 2. High Switching Speed : tF(typ.) =0.1µs 3. For Color Monitor