Gate Charge Improved Compliant to RoHS Directive 2002/95/EC

FEATURES • Low Figure-of-Merit Ron x Qg • 100 Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC

Power MOSFET

FEATURES • Low figure-of-merit Ron x Qg • 100 avalanche tested • Gate charge improved • trr/Qrr improved • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or pa

iscN-Channel MOSFET Transistor

文件：328.73 Kbytes Page：2 Pages

Power MOSFET

Power MOSFET

FEATURES • Low figure-of-merit Ron x Qg • 100 avalanche tested • Gate charge improved • trr/Qrr improved • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or pa

Power MOSFET

Power MOSFET

文件：271.29 Kbytes Page：13 Pages

16 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalan

500V, 16A N-Channel MOSFET

General Description The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capabili

16A 500V N-channel enhanced field effect transistor

文件：900.91 Kbytes Page：6 Pages

16A竊?00V N-CHANNEL MOSFET

文件：329.21 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

文件：305.65 Kbytes Page：2 Pages