型号 功能描述 生产厂家 企业 LOGO 操作
SIHFZ44

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation

VishayVishay Siliconix

威世威世科技公司

SIHFZ44

Power MOSFET

文件:1.54577 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

SIHFZ44

Power MOSFET

文件:1.54577 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

SIHFZ44

Power MOSFET

文件:1.49909 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

SIHFZ44

Power MOSFET

文件:1.62129 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

SIHFZ44

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Advanced process technology • Surface-mount (IRFZ44S, SiHFZ44S) • Low-profile through-hole (IRFZ44L, SiHFZ44L) • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet p

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Advanced process technology • Surface-mount (IRFZ44S, SiHFZ44S) • Low-profile through-hole (IRFZ44L, SiHFZ44L) • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet p

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.54577 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.62129 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:795.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:794.46 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:795.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:862.02 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.29269 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.29269 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.24618 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.36837 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.29269 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.36837 Mbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:795.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:862.02 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:795.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:795.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:862.02 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:795.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:795.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:795.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:862.02 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:795.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:862.02 Kbytes Page:11 Pages

VishayVishay Siliconix

威世威世科技公司

SIHFZ44产品属性

  • 类型

    描述

  • 型号

    SIHFZ44

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Power MOSFET

更新时间:2025-11-24 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
22+
TO-263
100000
代理渠道/只做原装/可含税
Vishay
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
VIS
23+
TO-220
10000
原装正品,假一罚十
VISHAY/威世
23+
TO-263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
VISHAY/威世
23+
SOT263
7000
Vishay
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
Vishay
24+
NA
3000
进口原装正品优势供应
VISHAY/威世
2022+
TO-220
2000
原厂代理 终端免费提供样品
VISHAY/威世
23+
TO-220
50000
全新原装正品现货,支持订货
VISHAY/威世
23+
TO-220
50000
全新原装正品现货,支持订货

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